Patents Assigned to Fundacio Institute De Ciencies Fotoniques
  • Patent number: 10302560
    Abstract: Apparatus for measuring light scattering of a sample comprising a light beam source, means for collimating the beam and making it impinge on the sample in a perpendicular direction, at least one light sensor, and at least one spatial filter between the sample and the optical sensor, provided with two apertures, means for measuring the total power reaching the sensor and means for measuring the power of beams with a low k vector after the beam traverses the filter. The invention provides thus a simplified, portable and compact device for measuring different parameters like haze, turbidity, etc. can be built, for any sample and without the need of changing detectors.
    Type: Grant
    Filed: December 18, 2017
    Date of Patent: May 28, 2019
    Assignees: Fundacio Institute de Ciencies Fotoniques, Institucio Catalana de Recerca I Estudis Avancatis
    Inventors: Valerio Pruneri, Pedro A. Martínez, Marc Jofre
  • Patent number: 9857300
    Abstract: Apparatus for measuring light scattering of a sample comprising a light beam source, means for collimating the beam and making it impinge on the sample in a perpendicular direction, at least one light sensor, and at least one spatial filter between the sample and the optical sensor, provided with two apertures, means for measuring the total power reaching the sensor and means for measuring the power of beams with a low k vector after the beam traverses the filter. The invention provides thus a simplified, portable and compact device for measuring different parameters like haze, turbidity, etc. can be built, for any sample and without the need of changing detectors.
    Type: Grant
    Filed: February 6, 2015
    Date of Patent: January 2, 2018
    Assignee: Fundacio Institute De Ciencies Fotoniques
    Inventors: Valerio Pruneri, Pedro Antonio Martïnez Cordero, Marc Jofre Cruanyes
  • Patent number: 9548435
    Abstract: An electronic platform comprising a substrate made of a ABO3 crystal (2) and at least one layer of a two-dimensional conducting sheet of carbon atoms (1) of a thickness between one and four atoms, characterized in that the conducting layer(s) is (are) placed on top of a face of the crystal whose orthogonal axis is at an angle up to 35° of the crystal's spontaneous polarization or c-axis. The invention achieves a sheet resistance lower than 1 ?/square at temperatures higher than 77K.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: January 17, 2017
    Assignees: FUNDACIÓ INSTITUTE DE CIÈNCIES FOTÒNIQUES PARQUE MEDITERRANEO DE LA TECNOLOGIA, INSTITUCIO CATALANA DE RECERCA I ESTUDIS AVANCATS
    Inventors: Valerio Pruneri, Frank Koppens, Davide Janner, Fabio Gatti