Abstract: Provided is an inorganic solid electrolyte material including sulfide-based inorganic solid electrolyte particles. In a frequency distribution of circularity of the particles where the circularity of the particles in the material is plotted on a horizontal axis and a number-based frequency is plotted on a vertical axis, a 10% cumulative value D10 is 0.54 to 0.80. In addition, a number-based median size d50 of the particles in the material is 0.1 to 10 ?m.

Abstract: Provided is a sulfide-based inorganic solid electrolyte material including Li, P, and S as constituent elements, in which in a spectrum obtained by 31P-NMR measurement, when a total area of peaks derived from a PS4 structure is represented by 1, a total area of peaks derived from a P2S6 glass structure is 0.1 or more.

Abstract: Provided is a method of separating an inorganic material from crushing balls to which the inorganic material is attached, the method including: a step of causing the crushing balls to collide against a mesh member.

Abstract: A method of manufacturing an inorganic material includes: a step (A) of preparing a first inorganic material as a raw material; a step (B) of obtaining a second inorganic material by crushing the first inorganic material using a ball mill to obtain fine particles of the first inorganic material, the ball mill including a cylindrical container and crushing balls; and a step (C) of separating the second inorganic material from the crushing balls to which the second inorganic material is attached, in which the step (B) includes a step (B1) of putting the first inorganic material and the crushing balls into the cylindrical container and subsequently rotating the cylindrical container about a cylindrical shaft and a step (B2) of moving the cylindrical container such that the first inorganic material moves in the cylindrical shaft direction.

Abstract: There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step S10 of fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step S11 of forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step S12 of cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step S13 of forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.

Abstract: Provided is a sulfide-based inorganic solid electrolyte material having lithium ionic conductivity, in which the sulfide-based inorganic solid electrolyte material has a particle shape, and when a mode diameter in a number average particle size distribution of the sulfide-based inorganic solid electrolyte material that is obtained from an observed image of a scanning electron microscope (SEM) is represented by Dm [?m] and a particle size corresponding to a cumulative frequency of 90% in the number average particle size distribution is represented by D90 [?m], a value of D90/Dm is 1.6 or more and 8.0 or less.

Abstract: According to the present invention, there is provided a group III nitride semiconductor substrate (free-standing substrate 30) that is formed of group III nitride semiconductor crystals. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A variation coefficient of an emission wavelength of each of the first and second main surfaces, which is calculated by dividing a standard deviation of an emission wavelength by an average value of the emission wavelength, is 0.05% or less in photoluminescence (PL) measurement in which mapping is performed in units of an area of 1 mm2 by emitting helium-cadmium (He—Cd) laser, which has a wavelength of 325 nm and an output of 10 mW or more and 40 mW or less, at room temperature. In a case where devices are manufactured over the free-standing substrate 30, variations in quality among the devices are suppressed.

Abstract: Provided is a lithium nitride manufacturing device (10) for heating a lithium member (9) in a nitrogen atmosphere to nitride the lithium member (9) such that lithium nitride is manufactured, the lithium nitride manufacturing device including: a reaction tank (1) where a nitriding reaction of the lithium member (9) is performed; a heating unit (2) that heats the lithium member (9); an atmosphere control unit (3) that controls a dew point in the reaction tank (1); and an atmosphere cooling unit (4) that cools an inside of the reaction tank (1).

Abstract: A method of manufacturing an inorganic material includes: a step (A) of preparing a first inorganic material as a raw material; and a step (B) of obtaining a second inorganic material by crushing the first inorganic material using a ball mill to obtain fine particles of the first inorganic material, the ball mill including a cylindrical container and crushing balls, in which the step (B) includes a step (B1) of putting the first inorganic material and the crushing balls into the cylindrical container and subsequently rotating the cylindrical container about a cylindrical shaft and a step (B2) of moving the cylindrical container such that the first inorganic material moves in the cylindrical shaft direction.

Abstract: Provided is a phosphorus sulfide composition for a sulfide-based inorganic solid electrolyte material, the phosphorus sulfide composition including P4S10 and P4S5, in which when a total content of P4S10, P4S5, P4S7, and P4S3 in the phosphorus sulfide composition is represented by 100 mass %, a content of P4S10 calculated from a solid 31P-NMR spectrum is 70 mass % or more and 99 mass % or less.

Abstract: A blower (100) blows inert gas. A crusher (200) repeats vitrifying plural kinds of inorganic compounds (A1) by mechanical energy and blowing up the plural kinds of vitrified inorganic compounds (A1) by the inert gas blown from the blower (100). At least some of the plural kinds of inorganic compounds (A1) blown up by the inert gas enter into a first collector (300). The first collector (300) returns the at least some of the plural kinds of inorganic compounds to the crusher (200). A system (S) (for example, a pipe (Pa), a buffer tank (110), a pipe (Pb), a pipe (Pc), and a pipe (Pi) described below) circulates the inert gas from the blower (100) through the crusher (200) and the first collector (300) to the blower (100).

Abstract: Provided is a method of manufacturing lithium nitride including: a step (A) of preparing a lithium member in which inorganic particles are embedded; and a step (B) of nitriding the lithium member by bringing the lithium member into contact with nitrogen in a state where the inorganic particles are embedded.

Abstract: A method of producing an inorganic material (S10) according to the present invention includes a vitrification step (S12) of applying shearing stress and compressive stress to a mixed powder (MP) of a plurality of kinds of inorganic compound powders by using a ring ball mill mechanism (70) to vitrify at least a part of the mixed powder (MP); and a dispersion step (S13) of dispersing the vitrified mixed powder (MP) after the vitrification step (S12), where a combined step of the vitrification step (S12) and the dispersion step (S13) is performed a plurality of times to obtain a vitrified inorganic material powder from the mixed powder.

Abstract: The method of manufacturing a sulfide-based inorganic solid electrolyte material, including: (A) preparing a sulfide-based inorganic solid electrolyte material in a vitreous state; and (B) annealing the sulfide-based inorganic solid electrolyte material in the vitreous state using a heating unit. Step (B) includes a step (B1) of disposing the sulfide-based inorganic solid electrolyte material in the vitreous state in a heating space, a step (B2) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space while increasing a temperature of the heating unit from an initial temperature T0 to an annealing temperature T1, and a step (B3) of annealing the sulfide-based inorganic solid electrolyte material in the vitreous state disposed in the heating space at the annealing temperature T1, and a temperature increase rate from the initial temperature T0 to the annealing temperature T1 in the step (B2) is 2° C./min or higher.

Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a sapphire substrate preparation step S10 for preparing a sapphire substrate having, as a main surface, a {10-10} plane or a plane obtained by inclining the {10-10} plane at a predetermined angle in a predetermined direction; a heat treatment step S20 for performing a heat treatment over the sapphire substrate while performing a nitriding treatment or without performing the nitriding treatment; a buffer layer forming step S30 for forming a buffer layer over the main surface of the sapphire substrate after the heat treatment; and a growth step S40 for forming a group III nitride semiconductor layer, in which a growth surface has a predetermined plane orientation, over the buffer layer, in which at least one of a plane orientation of the main surface of the sapphire substrate, presence or absence of the nitriding treatment during the heat treatment, and a growth temperature in the buffer layer forming step is adjusted such that the

Abstract: There is provided a group III nitride semiconductor substrate (free-standing substrate (30)) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 ?m or more and 1000 ?m or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.

Abstract: A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.

Abstract: An evaluation device (20) evaluates the operating conditions of a briquetting machine (10). The evaluation device (20) includes an evaluation information acquisition unit (220) and an evaluation data generation unit (230). The evaluation information acquisition unit (220) acquires a plurality of pieces of evaluation information indicating the evaluation results of a plurality of briquettes manufactured under the same manufacturing conditions by the briquetting machine (10). The evaluation data generation unit (230) generates evaluation data that is data obtained by comparing a plurality of pieces of evaluation information with each other.

Abstract: A method of manufacturing a thermoelectric conversion material includes a sintering step. In the sintering step, a sintered body of a sintered material (20) is obtained by applying a voltage to a conductive mold (10) in a first direction so as to cause energization under the condition in which an insulating layer (30) is disposed in at least a portion between an inner wall (12) of the mold (10) and the sintered material (20) and the insulating layer (30) keeps having insulating properties. Here, the sintered body is a thermoelectric conversion substance.

Abstract: Provided is an undersea mining base capable of corresponding with slopes and undulations of seabed ore deposits. The undersea mining base includes a seabed mineral mining device configured to form a pit in a seabed ore deposit and a platform equipped with the seabed mineral mining device and capable of self-traveling in at least one of an X direction and a Y direction.