Abstract: The physical property data of the object to be heated, set temperatures of heaters and blowers are provided to a reflow apparatus, and view factor setting data for determining the view factor of the surface-mounted circuit board are input. From the input these data, the number of heaters and blowers, and the heating characteristic data peculiar to the reflow apparatus, such as the heat transfer coefficient, the speed of conveyor and the like, the view factor is simply determined, and the temperature of the surface-mounted circuit board at the time of passing through the reflow apparatus is calculated with respect to the board and parts mounted thereon, using the determined view factor.

Abstract: A small-sized and low-cost silicon platform for optical modules which enables high-speed transmission. A conductor pattern is formed on an oxide layer formed on the surface of a silicon substrate through a dielectric film. A hole extending from the surface of the dielectric film to the oxide layer is formed in the dielectric film at a position for the formation of a bonding pad. A conductor material is directly formed on the oxide layer exposed to the bottom of this hole. This conductor material constitutes a bonding pad portion electrically connected to the conductor pattern.

Abstract: In a Raman amplifier using three or more pumping wavelengths, when the pumping wavelengths are divided into a short wavelength side group and a long wavelength side group at the boundary of the pumping wavelength having the longest interval between the adjacent wavelengths, the short wavelength side group includes two or more pumping wavelengths having intervals therebetween which are substantially equidistant, and the long wavelength side group is constituted by two or less pumping wavelengths.

Abstract: First pump light for Raman-amplifying optical signal is inputted to the output end of the optical signal, and second pump light used for Raman-amplifying the first pump light and having a wavelength shorter than that of the first pump light is inputted to the input end of the optical signal. The second pump light is also inputted to the output end of the optical signal. The first pump light is also inputted to the input end of the optical signal. The Raman amplification band of the second pump light is made not to be overlapped with that of the optical signal. The wavelength of the second pump light is shorter than that of the first pump light by the Raman shift of the amplifier fiber. The light source of either the first or second pump light or both the light sources of them are multiplex optical sources. The first pump light is emitted from a semiconductor laser. Third pump light for Raman-amplifying the second pump light is directed to an optical transmission line.

Abstract: Disclosed is an optical transmission line having a length L of 30 km to 150 km, preferably 30 km to 70 km, an absolute value of a dispersion not smaller than 8 ps/nm/km at a wavelength of 1.55 ?m at every point of the optical transmission line, a maximum accumulated dispersion not larger than 7.5×L (ps/nm) at a wavelength of 1.55 ?m, and a dispersion for the entire optical transmission line of ?5 to +5 ps/nm/km at a wavelength of 1.55 ?m. The optical transmission line is formed by, for example, combination of a positive dispersion optical fiber and a negative dispersion optical fiber.

Abstract: A reverse dispersion optical fiber having a small waveform distortion caused by non-linearity wherein an effective core area is made at least 50 ?m2 and a dispersion at a wavelength of the 1.55 ?m band is made not more than ?10 ps/nm/km and a dispersion management optical transmission line having a small waveform distortion obtained by connecting a positive dispersion optical fiber and that reverse dispersion optical fiber in that order along a direction of signal transmission and having a total dispersion of substantially zero.

Abstract: A compressive strain GRIN-SCH-MQW active layer and a tensile strain GRIN-SCH-MQW active layer are laminated, and there are provided a diffraction grating formed in the vicinity of the compressive strain GRIN-SCH-MQW active layer and a diffraction grating formed in the vicinity of the tensile strain GRIN-SCH-MQW active layer, between the radiation end face and the reflection end face of the laser beam. A laser beam obtained by polarization-multiplexing a laser beam in the TE mode generated in the compressive strain GRIN-SCH-MQW active layer and a laser beam in the TE mode generated in the tensile strain GRIN-SCH-MQW active layer, and having a plurality of oscillation longitudinal modes of not larger than a predetermined output value is output by the wavelength selection characteristic of the diffraction gratings.

Abstract: A light source comprising a plurality of laser diode modules, wherein a plurality of high optical power laser diode modules are arranged in high density, each of the plurality of high optical power laser diode modules includes a metal substrate mounting a laser diode chip and an optical instrument thereon; a Peltier device thermally connected to the metal substrate; a heat pipe having a heat absorbing portion and a heat dissipating portion in which the heat absorbing portion is thermally connected to the Peltier device and a heat dissipating fin is provided on the heat dissipating portion; and a heat pipe reinforcing member to hold the heat dissipating fin and reinforce a strength of the heat pipe.

Abstract: An optical attenuator has first and second lenses provided individually on the respective end faces of first and second optical fibers that are opposed to each other across a space, and a shutter plate interposed between the lenses. The distance between the shutter plate and the second lens and a mode-field radius of propagating light on the second-lens-side surface of the shutter plate are set so that the respective signs of the real and imaginary parts of an evaluation function, representing a diffraction pattern of the propagating light that propagates from the first optical fiber to the second optical fiber, are inverted 60 times or more when a variable of the evaluation function is changed within an evaluation range.

Abstract: In a light source comprising a plurality of laser diode modules, high optical power is outputted, while these laser diode modules are arranged in high density. The light source is arranged by employing a plurality of laser diode modules, the optical power of which is higher than, or equal to 300 mW.

Abstract: An electro-absorptive-modulated laser (EAML) module includes a signal transmission line for transferring a high-frequency modulating signal from a signal source having an output impedance of 50 ? to an EA modulator in the EAML module. The signal transmission line includes a coplanar waveguide with ground plane (CPWG) having a characteristic impedance of 41.8 ?, a series resistor having a resistance of 5 ?, and a termination resistor of 50 to 150 ?. The characteristic impedance of CPWG is controlled by reducing the gap between the signal line and coplanar ground plates.

Abstract: A plate-type heat pipe including a hermetically sealed container in which a working fluid is received, said container comprising a plate member on which at least one heat generating device is thermally connected and another plate member forming a cavity inside thereof in combination with said plate member, and said container being formed by pressure-bonding both peripheral portions of said plate member and said another plate member combined together.

Abstract: An optical circuit device includes: a substrate and an optical waveguide layer having a core and a cladding formed on the substrate; an optical waveguide circuit of the core having an optical splitter for splitting light, an optical coupler for coupling light, a first connecting optical waveguide and a second connecting optical waveguide for connecting the optical splitter and the optical coupler, and the first and second connecting optical waveguides respectively having first and second phase adjustment means capable of varying the phases of a propagating light, the optical circuit device being formed such that the rate of change of the polarization difference of phases in the first phase adjustment means and the rate of change of the polarization difference of phases in the second phase adjustment means are different from each other with respect to the phase adjustment amounts when the first and second phase adjustment means perform phase adjustment.

Abstract: A method of connecting a flat cable having flat conductors arranged in parallel and covered with an insulating material to a connecting terminal, in which crimp pieces of the connecting terminal are pierced into a desired conductor of conductors of the flat cable, with a gap left between a substrate of the connecting terminal and the flat cable, and leading ends of the crimp pieces penetrating the flat cable are bent inwardly, while maintaining a contact position of the crimp pieces penetrating the conductor and the conductor unchanged. Also disclosed are an apparatus for embodying the connecting method and a method for determining a connecting state between the flat cable and the connecting terminal.

Abstract: A semiconductor laser device and module for use in a dense wavelength division multiplexed optical communications system are shown. The laser device preferably has cavity lengths greater than 1000 ?m, and compressive strain multi-quantum well active layer, and front-facet reflectivity of less than about 4%. Higher optical outputs by longer cavity lengths are achieved. Preferred modules use these laser diodes with external wavelength-selective reflectors that have narrow bandwidths of 3 nm or less, and which include a plurality of longitudinal mode subpeaks within the bandwidth. Relationships between reflectivity value of the front facet and the peak reflectivity of the wavelength-selective reflector for long cavity length laser device are also disclosed, with the relationships providing higher output power along with a stabilized output spectrum.

Abstract: Provided is an automobile power cable in which a stranded wire formed of a plurality of high conductive Al alloy strands each essentially consisted of 0.05 to 0.4 wt. % of Zr, 0.05 to 0.2 wt % of Fe, 0.05 to 0.2 wt. % of Si; and 0.003 to 0.05 wt. % in total of more than one or two kinds selected from a group consisting of Be, Sr, Mg, Ti and V; and the remainder of Al and unavoidable impurities, is coated thereover with an insulation layer made of flame-resistant polyolefin resin and a shield layer formed of a braid containing more than 99 wt. % of Al.

Abstract: Provided are connection methods and a heat treatment apparatus to be used in the method capable of readily applying heat treatment to a fusion-spliced portion of a connection line which is formed by fusion-splicing optical fibers of different kinds and capable of finishing the heat treatment with no excess or insufficiency. In the connection methods, after fusion-splicing the optical fibers of different kinds having different MFDs, the heat treatment is carried out to match the MFDs. At the same time, a dummy connection line of dummy optical fibers of different kinds is prepared, which is the same combination as the connection line of the optical fibers of different kinds to which the heat treatment is applied. While measuring connection loss in the dummy connection line directly or indirectly, the heat treatment is applied to the dummy connection line as well as the connection line.

Abstract: A seat belt connector assembly is provided with a seat belt anchor adapted to be coupled to a passenger seat and a cover for accommodating an upper part of the seat belt anchor. The seat belt anchor and the cover, which are relatively movable, are each formed with a seat-belt insertion hole permitting a seat belt to pass therethrough, and are formed with a mark and a through hole, respectively. When the desired relative position permitting the desired tension force to be applied to the seat belt is established between the seat belt anchor and the cover, the mark is made visible through the through hole.

Abstract: A GaN-based FET has a buffer layer structure including GaN first buffer layer and an AlGaN second buffer layer between a substrate and an active layer structure including a channel layer and a donor layer. The GaN first buffer layer and the AlGaN second buffer layer reduce dislocation defects in the active layer structure and allows the FET to have a lower leakage current and a satisfactory pinch-off characteristic. A plurality of GaN first buffer layers and a plurality of AlGaN second buffer layers may be deposited alternately one on another on the substrate.

Abstract: An electro-absorptive-modulated laser (EAML) module includes a signal transmission line for transferring a high-frequency modulating signal from a signal source having an output impedance of 50? to an EA modulator in the EAML module. The signal transmission line includes a coplanar waveguide with ground plane (CPWG) having a characteristic impedance of 41.8?, a series resistor having a resistance of 5 ?, and a termination resistor of 50 to 150 ?. The characteristic impedance of CPWG is controlled by reducing the gap between the signal line and coplanar ground plates.