Abstract: An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.
Type:
Grant
Filed:
February 4, 2005
Date of Patent:
April 3, 2007
Assignees:
Sony Corporation, Furuyametals Co., Ltd.
Abstract: An alloy material, a thin film and an optical recording medium to achieve various tasks such as maintenance of a high reflectivity, improved corrosion resistance, simplified production of the alloy, and realization of stability and simplicity/easiness of a sputtering process when being used as a sputtering target. An AgPd alloy including Ag as a main component and Pd in the range of 0.5 to 4.9 atomic % is used as a thin film formation use sputtering target material, with the target material a thin film, that is a reflecting film, constituting an optical recording medium is formed and the optical recording medium containing the reflecting film as a constituent is produced.
Type:
Grant
Filed:
October 29, 1999
Date of Patent:
December 6, 2005
Assignees:
Sony Corporation, Furuyametals Co., Ltd.
Abstract: Disclosed is a reaction vessel used for oxidizing and decomposing equipment suitable for processing with supercritical water, and methods of manufacturing the reaction vessel. The reaction vessel comprises an oxide film containing a platinum group metal oxide for example having a fine crystalline structure, and a high corrosion resistance in both oxidizing and reducing atmosphere. The film is formed on a surface of the vessel by performing a pyrolysis reaction in an atmosphere containing water vapor. The oxide film is comprised of at least one platinum group metal oxide selected from Ir, Ru or Rh oxide, and at least one oxide of a metal selected from Ti and Ta.
Abstract: The present invention relates to a metal material for electronic parts, electronic parts, electronic apparatuses, a method of processing metal materials, and electro-optical parts. For example, the present invention is applied to liquid crystal display panels, various semiconductor devices, wiring boards, chip parts, and the like. The present invention proposes a metal material for electronic parts which is characterized by lower resistivity, higher stability, and more excellent processability than the prior art. The present invention also proposes electronic parts and electronic apparatuses which use this metal material. An applicable metal material is an alloy containing Ag as a main component, 0.1 to 3 wt % of Pd, and 0.1 to 3 wt % in total of elements such as Al.
Type:
Grant
Filed:
July 11, 2000
Date of Patent:
April 20, 2004
Assignees:
Sony Corporation, Furuyametals Co., Ltd.
Abstract: Disclosed is a reaction vessel used for oxidizing and decomposing equipment suitable for processing with supercritical water, and methods of manufacturing the reaction vessel. The reaction vessel comprises an oxide film containing a platinum group metal oxide, for example having a fine crystalline structure, and a high corrosion resistance in both oxidizing and reducing atmosphere. The film is formed on a surface of the vessel by performing a pyrolysis reaction in an atmosphere containing water vapor. The oxide film is comprised of at least one platinum group metal oxide selected from Ir, Ru or Rh oxide, and a platinum group metal selected from Ti and Ta.
Abstract: Disclosed is a reaction vessel used for oxidizing and decomposing equipment suitable for processing with supercritical water, and methods of manufacturing the reaction vessel. The reaction vessel comprises an oxide film containing a platinum group metal oxide for example having a fine crystalline structure, and a high corrosion resistance in both oxidizing and reducing atmosphere. The film is formed on a surface of the vessel by performing a pyrolysis reaction in an atmosphere containing water vapor. The oxide film is comprised of at least one platinum group metal oxide selected from Ir, Ru or Rh oxide, and at least one oxide of a metal selected from Ti and Ta.
Abstract: Disclosed is a reaction vessel used for oxidizing and decomposing equipment suitable for processing with supercritical water, and methods of manufacturing the reaction vessel. The reaction vessel comprises an oxide film containing a platinum group metal oxide, for example having a fine crystalline structure, and a high corrosion resistance in both oxidizing and reducing atmosphere. The film is formed on a surface of the vessel by performing a pyrolysis reaction in an atmosphere containing water vapor. The oxide film is comprised of at least one platinum group metal oxide selected from Ir, Ru or Rh oxide, and a platinum group metal selected from Ti and Ta.
Abstract: There is disclosed an optical data storage medium in which the weather resistance of the semitransparent reflective film is improved and the adhesive property between the semitransparent reflective film and a substrate is enhanced, and which has a higher reliability. In an optical data storage medium (6), on the side on which a reproduction light (8) is incident, a first information layer (9) is located while on the side opposite to the side on which the reproduction light (8) is incident, a second information layer (10) is located. A semitransparent reflective film (3) of first information layer (9) is AgPdCu alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Cu or AgPdTi alloy thin films containing 0.5 to 3.0 weight % Pd and 0.1 to 3.0 weight % Ti. At the wavelength 650 nm, the optimum film thickness of AgPdCu alloy thin film is 5 to 18 nm and the optimum film thickness of AgPdTi alloy thin film is 10 to 25 nm.
Type:
Grant
Filed:
September 20, 1999
Date of Patent:
May 8, 2001
Assignees:
Furuyametals Co. Ltd., Sony Corporation, Sony Disc Technology Inc.