Abstract: The present invention relates to a method for improving service life of mesoscopic gear manufactured by an additive manufacturing method. The outer diameter of the mesoscopic gear is characterized by range from 1 mm to 10 mm. The method according to the present invention provides introduction of compressive residual stress below the surface of the gear while the mesoscopic geometry remains the same. The second aspect of the present invention relates to the product manufactured by the method according to the present invention.

Abstract: The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s).

Abstract: The invention relates to a LASER amplification module for a solid-state laser system and method for manufacturing thereof. The present invention relates to a laser amplification module for a solid-state laser. More particularly, the present invention relates to the module amplifying laser beam capable to provide effective cooling of a heat sink bonded to a solid-state disk.

Abstract: The present invention relates to a method for determining the crystal structure of a crystal (4) capable of electron diffraction. The method includes the steps of obtaining a three-dimensional electron diffraction pattern and processing data from the electron diffraction pattern. The essence of the invention is that the method of determination consists in creating virtual diffraction frames containing a list of integrated scattered electron intensities. Subsequently, the dynamical diffraction theory is used in the data processing step. In another embodiment, the invention provides an apparatus capable of performing this method.

Abstract: The present invention relates to a method and device capable to form a nanomaterial structure (13) on a receiver (14) by transfer of nanomaterial from a donor film. In some embodiment, the transfer can be provided by laser induced forward transfer, more preferably by blister based laser induced forward transfer. The method further comprises a simultaneous scanning of the donor film (12) or the receiver (14) so that, a computer driven means for moving the receiver (14) and the donor film (12) can form high precision nanomaterial structure (13). In a preferred embodiment, the simultaneous scanning can be provided by an imaging laser generating high harmonic waves which are detected by a detector. In yet another embodiment, the receiver (14) and/or donor film (12) can be further scanned by a broadband light source(s).

Abstract: The present invention relates to a device, use of the device and a method for high contrast imaging, particularly suitable for imaging of moving object of interest such as gas expanding from a gas jet or physical or chemical or biological processes in material. The device for high-contrast imaging comprises a beam splitter for splitting a beam into a probe beam and a reference-beam, wherein the probe beam is directed to an object; a self-imaging system for receiving the probe beam from the object and imaging the object on itself while in a preferred embodiment, the system preserves a reflected probe beam divergence. The beam interacts with the object at least twice; and the reflected probe beam is further directed to the splitter after the last interaction; and detection means receiving the probe beam from the splitter.

Abstract: The present invention concerns an apparatus for spectral and intensity profile characterization comprising: a diffractive element; a beam block (3) attached to the diffractive element, the beam block (3) being positioned so as to block the passage of the direct incoming beam (1) which is not incident on the diffractive element; a device for translation of the beam block (3) and the diffractive element; reflective element (4); fixed detector (5) positioned on the axis of the incoming beam (1). The invention also concerns use and a method thereof. Such a compact system provides application in the field of spectrometry and diagnostics of the beam intensity profile, especially in the area of XUV and soft X-rays.

Abstract: A radiotherapy system comprising at least one pulsed radiation source, at least one imaging system, a control system, and a synchronization system is disclosed. The pulsed radiation source deposits high dose radiation pulses to a target region inside the patient; simultaneously the imaging system is used to monitor the target region, synchronized by the synchronization system. The dose per radiation pulse is high enough to deposit, within few pulses, 1 Gy at a depth of at least 1 cm in water. At each irradiation time step, the pulsed radiation source delivers short pulses of radiation (<1 ms) and the imaging system performs a snapshot of the position, and eventually the shape, of the target region during the irradiation time, with a time resolution better than 200 ms. Being both the pulsed radiation source and imaging system synchronized by the synchronization system with less than 200 ms jitter, this system allows for very precise reconstruction of the map of the dose deposited into the target region.

Abstract: A scintillation detector for detecting ionizing radiation, which comprises: a monocrystalline substrate layer; at least one bottom nitride semiconductor layer; an active area on top of the nitride bottom semiconductor layer, which comprises a plurality of alternating nitride semiconductor layers of substantially the same polarization, each couple of the alternating layers consists of a barrier layer of a AlybInxbGa1-xb-ybN type and a potential well layer of a AlywInxwGa1-xw-ywN type for radiant recombinations of electrons and holes, where xb?xw and yb?yw is valid; at least one top nitride semiconductor layer on top of the active area; and at least one GaN buffer layer for binding with epitaxy on top of said monocrystalline substrate a structure which comprises: the bottom nitride semiconductor layer; the alternating layers of the active area; and the top nitride semiconductor layer; each of the nitride semiconductor layers has the general formula of AlyInxGa1-x-yN.

Abstract: A photovoltaic cell (10) is fabricated by depositing a first transparent conductive layer (12) onto a substrate carrier (11). Portions of the first transparent conductive layer (12) are selectively removed to form a plurality of discrete transparent conductive protruding regions (13) or a plurality of discrete indentations (27) in the first transparent conductive layer (12). A silicon layer (14) comprising a charge separating junction is deposited onto the plurality of discrete protruding regions (13) or onto the plurality of discrete indentations (27) by chemical vapour deposition. A second transparent conductive layer (15) is deposited on the silicon layer (14) by chemical vapour deposition.

Abstract: A photovoltaic cell (10) is provided which includes a substrate carrier (11), a first transparent conductive layer (12) positioned on the substrate carrier (11) comprising a plurality of discrete transparent conductive protruding regions (13) or a plurality of discrete indentations. A silicon layer (14) comprising a charge separating junction covers the first transparent conductive layer (12) and the plurality of discrete transparent conductive protruding regions (13) or the plurality of discrete indentations and a second transparent conductive layer (15) is positioned on the silicon layer (14).