Abstract: Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications.

Abstract: Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and unintentional, defect-induced blocking barriers when interfacial defects are passivated by hydrogen diffused from shallow implants towards the interface. Systems and methods comprising oxide-free, low temperature covalent wafer bonding with passivated interface states are used in various applications requiring reduced interfacial scattering and carrier trapping and efficient charge collection across bonded interfaces.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.