Abstract: The present disclosure provides a camera module, including: a movable assembly configured to drive a lens assembly to move along a direction of an optical axis; and an elastic device uniformly arranged configured to come into contact with the movable assembly to generate an elastic deformation to apply a squeezing force to the movable assembly. A resultant force direction of the squeezing force points towards the optical axis and is perpendicular to the optical axis. The elastic device includes a first elastic device and a second elastic device, and a resultant force direction of a squeezing force applied to the movable assembly by the first elastic device is opposite to a resultant force direction of a squeezing force applied to the movable assembly by the second elastic device. The present disclosure can ensure a stability of the movement of the camera module in a large stroke.

Abstract: A locking structure for a camera module and a camera module. The locking structure comprises: a coil unit; and a magnetic unit, the magnetic unit being disposed opposite to the coil unit. When the coil unit is energized, the direction of the magnetic field generated by the coil unit interacts with the direction of the magnetic field of the magnetic unit so as to drive the relative movement of the coil unit and the magnetic unit. The locking structure having such a structure has a simple structure and is easy to assemble. Moreover, the performance of the locking structure can be independently tested and maintained, thereby ensuing that the locking structure has a high yield rate.

Abstract: An optical image stabilization apparatus and a camera module are provided. The optical image stabilization apparatus includes: a shape memory alloy driving component, a fixed component, and a movable component. The shape memory alloy driving component is disposed between the fixed component and the movable component to drive the movable component to move relative to the fixed component. The shape memory alloy driving component is connected with the fixed component and/or the movable component by means of through a metal spacer, and the metal spacer is detabably connected with the fixed component and/or with the movable component.

Abstract: The present disclosure provides a camera module and a digital device including the camera module. The camera module includes a movable assembly and a fixing assembly. The movable assembly includes a carrier and a first rolling member arranged on a side wall of the carrier, and the first rolling member has a protruding surface protruding from the side wall of the carrier. The fixing assembly includes a base. The base is provided with a first support member, and the first support member is provided with a metal guide rail extending along a direction of an optical axis. When the carrier is installed on the base, the protruding surface of the first rolling member comes into contact with the metal guide rail, and when the movable assembly moves, the first rolling member moves with the movable assembly and forms a rolling or sliding contact with the first support member.

Abstract: A display panel of a portable electronic device and a method for designing the same are provided. A display module includes a display panel, a drive chip and a flexible circuit board. The display panel includes a display area and a non-display area, and the drive chip corresponds to the non-display area of the display panel. The display panel is provided with an electrical connection point for connecting with the flexible circuit board, and the electrical connection point corresponds to a side of the drive chip so as to reduce a height of the non-display area of the display panel. The display panel and the method for designing the display panel are suitable for display panels of various materials, which can reduce the height of the non-display area, improve the integration of the display panel, enhance the portable performance of the electronic device, and maintain a lower manufacturing cost.

Abstract: A method for forming a backside illuminated image sensor with a three-dimensional transistor structure is provided, where forming a gate of the three-dimensional transistor structure includes: forming a source follower transistor and/or a reset transistor with a three-dimensional transistor structure, wherein the source follower transistor and/or the reset transistor correspond to a protruding structure; and forming an insulating sidewall around the protruding structure, forming a groove between the insulating sidewall and a channel region of a transistor corresponding to the protruding structure, and forming a gate of the transistor in the groove, wherein the gate of the transistor is isolated by the insulating sidewall.

Abstract: The present invention discloses a CMOS image sensor structure and packaging method thereof. The method includes the following steps: providing an image sensor chip and a transparent package substrate that is ground and cut, the front side of the image sensor chip being provided with an image sensing region and a pad region surrounding the image sensing region; bonding a first end of a metal wire onto the pad, the other end being suspended outside the image sensor chip; bonding the transparent package substrate and the image sensor chip having the metal wire to form an image sensor package, which can be assembled by surface mount technology (SMT) or pressure welding via the exposed and suspended metal wire. In the present invention, an auxiliary substrate is optionally used and an optical glass is directly fixed to the image sensor chip, and the image sensor chip is directly connected to a circuit board.

Abstract: The present disclosure provides a control method for a camera module. The camera module comprises an imaging module, a sleeve module, a lens module which is mounted in the sleeve module and can move along an optical axis direction relative to the sleeve module, at least one coil, at least one magnetic component, and elastic components disposed between the lens module and the sleeve module.

Abstract: A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (120); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer (120) and formed on an upper surface of a first conductive type semiconductor substrate (100), the gate structure (130) comprising: gate oxide (131), a gate layer (132), and a gate sidewall (133), and the gate structure (130) correspondingly covering the photodiode; and a floating diffusion zone (140), formed in the first conductive type semiconductor substrate (100) and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (100), so that a dark current is effectively prevented from being produced.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes: a photo diode; a first-conductive-type isolating layer; a second-conductive-type lightly-doped region formed in the first-conductive-type semiconductor substrate; a first-conductive-type lightly-doped region formed under the second-conductive-type lightly-doped region, where the second-conductive-type lightly-doped region is isolated from the second-conductive-type region by the first-conductive-type lightly-doped region; a gate structure of a transfer transistor; and a floating diffusion region which is second-conductive-type heavily-doped.

Abstract: A backside illumination image sensor and a method for reducing a dark current of the backside illumination image sensor. The backside illumination image sensor comprises: a photodiode, a first conductive type isolated layer (120); a gate structure of a pass transistor, corresponding to the first conductive type isolated layer (120) and formed on an upper surface of a first conductive type semiconductor substrate (100), the gate structure (130) comprising: gate oxide (131), a gate layer (132), and a gate sidewall (133), and the gate structure (130) correspondingly covering the photodiode; and a floating diffusion zone (140), formed in the first conductive type semiconductor substrate (100) and having second conductive type heavy doping. In the backside illumination image sensor, a defect does not easily appear on a surface, right above the photodiode, of the first conductive type semiconductor substrate (100), so that a dark current is effectively prevented from being produced.

Abstract: The present invention relates to a backside illuminated image sensor and a manufacturing method therefor. The backside illuminated image sensor comprises: a silicon wafer layer, which comprises a photodiode for generating an electrical signal by sensing light, wherein the silicon wafer layer is provided with a front surface and a back surface; a rear-end layer, which is provided on the front surface of the silicon wafer layer, wherein the rear-end layer comprises a transistor gate, a gate oxide layer, a wire layer and a dielectric layer; a light incidence layer, which comprises a micro-lens layer and a light filtering film layer, wherein the light incidence layer is provided on the back surface of the silicon wafer layer; and the rear-end layer further comprises: a light-absorbing layer, which is provided in a pre-set position of the rear-end layer, wherein the light-absorbing layer is used for absorbing a light ray transmitted from the silicon wafer layer.

Abstract: A dynamic random access memory (DRAM) and a production method, a semiconductor packaging component and a packaging method. The production method comprises: providing a memory wafer, the memory wafer being provided with a memory bare chip which is provided with a top metal layer which is provided with a power source bonding pad, a signal bonding pad, and a micro bonding pad, and an internal bus led out of the memory bare chip being electrically connected to the micro bonding pad; repairing the memory wafer; if a yield of the memory wafer is greater than or equal to a preset threshold, rearranging the micro bonding pad to form a butt-joint bonding pad which is electrically connected to the micro bonding pad and the power source bonding pad. A structure of the DRAM is not significantly changed, a data bandwidth of the DRAM is increased, and a high yield is ensured.