Patents Assigned to GAN Semiconductor Inc.
  • Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis
    Patent number: 6407409
    Abstract: A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.
    Type: Grant
    Filed: April 16, 2001
    Date of Patent: June 18, 2002
    Assignee: GAN Semiconductor, Inc.
    Inventors: Hak Dong Cho, Sang Kyu Kang
  • Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
    Patent number: 6372041
    Abstract: A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.
    Type: Grant
    Filed: January 7, 2000
    Date of Patent: April 16, 2002
    Assignee: GAN Semiconductor Inc.
    Inventors: Hak Dong Cho, Sang Kyu Kang