Abstract: To provide a method for producing an amidinate metal complex which is represented by [R1—N—C(R3)—N—R2]nM in cost saving and simple manner. A method for producing an amidinate metal complex represented by [R1—N—C(R3)—N—R2]nM including: a first step in which R3X is reacted with a metal Li in a solvent to obtain R3Li solution with LiX suspended therein; a second step in which the R3Li solution with LiX existing therein is reacted with R1—N?C?N—R2 to obtain a [R1—N—C(R3)—N—R2]Li solution with the LiX suspended therein; a third step in which the [R1—N—C(R3)—N—R2]Li solution with the LiX existing therein is reacted with MX to obtain an amidinate metal complex solution, represented by the [R1—N—C(R3)—N—R2]nM, with the LiX suspended therein; and a fourth step for removing the LiX in the solution obtained by the third step.

Abstract: A purpose of the invention is to provide a novel compound. The novel compound is represented by M[i-C3H7NC(R)N-i-C3H7]2 (where, M=Co or Fe; R=n-C3H7 or i-C3H7) that is a liquid under 25° C. (at 1 atmospheric pressure).

Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

Abstract: The present invention is directed to a method for forming a copper-based film on a substrate in supercritical fluid, wherein (N,N?-Diisopropylpropion amidinate) copper dimer is dissolved in supercritical fluid and copper is deposited on the substrate to form the copper-based film thereon.

Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.