Abstract: The present invention provides a reproducible preliminary in-situ oxide removal step for patterned self-assisted III-V semiconductor nanowire growth. Here “in-situ” means located within the same treatment environment or apparatus as the nanowire growth process, e.g. with a molecular beam epitaxy (MBE) apparatus or the like. Providing an in-situ process may prevent the formation of a thin oxide layer during transfer of the substrate into the nanowire growth apparatus.
Type:
Application
Filed:
April 21, 2015
Publication date:
October 29, 2015
Applicants:
UCL Business PLC, Gasp Solar ApS
Inventors:
Martin Aagesen, Yunyan Zhang, Jiang Wu, Huiyun Liu
Abstract: The application discloses a technique for fabricating gallium-arsenide-phosphorous (GaAsP) nanostructures using gallium-assisted (Ga-assisted) Vapour-Liquid-Solid (VLS) growth, i.e. without requiring gold catalyst particles. The resulting Ga-assisted GaAsP nanostructures are free of gold particles, which renders them useful for optoelectronic applications, e.g. as a junction in a solar cell. The Ga-assisted GaAsP nanostructures can be fabricated with a band gap in the range 1.6 to 1.8 eV (e.g. at and around 1.7 eV).
Type:
Application
Filed:
July 17, 2012
Publication date:
September 25, 2014
Applicant:
GASP Solar APS
Inventors:
Martin Aagesen, Henrik Ingerslev Jorgensen, Jeppe Vilstrup Holm, Morten Schaldemose
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