Abstract: Disclosed herein is a method of manufacturing a nanocomposite using expanded graphite. The method is characterized in that monomers are formed into a polymer between the plate-shaped layers of the expanded graphite, and the polymer is intercalated therebetween, so that the plate-shaped layers of the expanded graphite are completely exfoliated or are formed into graphene, with the result that the expanded graphite is completely dispersed in a polymer matrix. The nanocomposite manufactured by this method has excellent electrical conductivity and thermal conductivity because the expanded graphite is uniformly dispersed in this nanocomposite.

Abstract: Disclosed herein is a method of manufacturing a nanocomposite using expanded graphite. The method is characterized in that monomers are formed into a polymer between the plate-shaped layers of the expanded graphite, and the polymer is intercalated therebetween, so that the plate-shaped layers of the expanded graphite are completely exfoliated or are formed into graphene, with the result that the expanded graphite is completely dispersed in a polymer matrix. The nanocomposite manufactured by this method has excellent electrical conductivity and thermal conductivity because the expanded graphite is uniformly dispersed in this nanocomposite.

Abstract: Disclosed herein is a semiconductor sealing material composition, including: 9.0˜13 wt % of an epoxy resin; 6˜7 wt % of a hardener; 0.2˜0.3 wt % of a curing catalyst; 0.60˜0.68 wt % of at least one additive selected from the group consisting of a coupling agent, a release agent and a coloring agent; and 79˜84 wt % of a filler, wherein the filler is nano-graphene plate powder. The semiconductor sealing material composition has excellent crack resistance at a high temperature of 270° C. or more and has high thermal conductivity and excellent flame retardancy.