Abstract: The refractory protected, replaceable insert for a gasifier includes a replaceable floor edge insert that is formed with a predetermined mating profile that is complementary to a finished mating profile of the gasifier floor. The geometry of the mating profiles of the replaceable floor edge insert and the gasifier floor permit removable engagement between the floor edge insert and the mating profile of the gasifier floor. The replaceable floor edge insert is protected by a ring-like arrangement of hanging refractory bricks that each include an appendage. Each brick appendage covers a portion of the inner radial edge of the replaceable floor edge insert and also covers an upper surface portion of an underlying quench ring, thus prolonging the life of the floor and the quench ring. A refractory ceramic fiber paper can be provided between the hanging brick and the floor edge and quench ring.

Abstract: A bracket comprises a mounting base, a landing riser attached to the mounting base, a landing attached to the landing riser, a slot-defining structure riser attached to the mounting base and a slot-defining structure attached to the slot-defining structure riser. A first landing surface of the landing is parallel to at least a portion of a first mounting base surface of the mounting base. A slot is defined between first and second slot-defining surfaces of the slot-defining structure. The first slot-defining surface is parallel to the first landing surface. A method of making a bracket, comprises forming a unitary element and bending the unitary element to produce a bracket. A method of mounting a rooftop element on a rooftop structure comprises attaching at least two brackets to the rooftop structure, and positioning a rooftop element on the brackets. A rooftop array comprises a rooftop structure, a plurality of brackets attached to the rooftop structure and a plurality of rooftop elements.

Abstract: There is provided a structure comprising semiconductor material, the structure having at least one zone of reduced oxygen concentration, such zone having an interstitial oxygen concentration of not greater than 3×1017 oxygen atoms/cm3, such zone extending at least 75 microns in depth from a first major surface. There is further provided a photovoltaic cell comprising at least one such structure.

Abstract: There are provided methods of purifying a material, comprising melting solid material to form liquefied material, directionally solidifying a portion of the liquefied material; and removing a liquid remainder from the purified solidified material. Preferably, the purified solidified material is melted to form re-liquefied purified material, and re-liquefied purified material is removed. Preferably, the material is positioned in a container as it is being purified. The method is particularly useful for purifying elemental material, e.g., semiconductor material such as silicon and/or germanium, such as recycle scrap silicon and/or metallurgical grade silicon. There are also provided systems for carrying out such methods.

Abstract: There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

Abstract: A method of electrochemically processing an article having a semi-insulating element and a conducting element comprises forming a conductive layer on the article, the conductive layer comprising at least a first region covering at least a portion of the semi-insulating element and a second region covering at least a portion of the conducting element; gripping with at least one conductive gripper a portion of the first region; submerging at least a portion of the second region in an electrolyte while keeping the conductive gripper out of said electrolyte; and conducting current through a circuit comprising the conducting element, the conductive layer, the conductive gripper, and an electrode submerged in the electrolyte. The conductive layer is preferably formed by diffusing a dopant from a vapor phase.

Abstract: A maximum power level sensor and method for reliably providing instantaneous estimates of maximum power level for a photovoltaic system including one or more photovoltaic cells under prevailing conditions of irradiance, array temperature and spectrum of sunlight. The maximum power level sensor produces a reference voltage signal which is proportional to the maximum power level of the photovoltaic system. The maximum power level sensor comprises a reference circuit including at least one reference photovoltaic cell and a thermistor network in parallel with the reference cell. The thermistor network comprises at least one negative temperature coefficient thermistor, at least one resistor in parallel with the thermistor, and at least one resistor in series with the thermistor and the parallel resistor. The thermistor is positioned in or on the photovoltaic array. The reference cell is preferably constructed of materials which are similar to those of the photovoltaic cells in the photovoltaic system.

Abstract: A structure comprising at least one layer of germanium formed on a surface of a ceramic substrate. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. Also, a structure comprising at least one layer of germanium formed on a surface of a ceramic substrate, and at least one capping layer formed on a surface of the layer of germanium. Also, a method of forming a thin film germanium structure, comprising forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.