Abstract: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

Abstract: A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.

Abstract: In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light.

Abstract: In order to transport printed circuit boards (30) through a processing system (12), printed circuit boards (30) lying one behind another can be connected by means of holding clips (22) to form a type of chain. The outer ends of the holding clips (22) are suspended on two spaced-apart transport chains (16) which provide for transport and mounting. The holding clips are formed in two parts with a lower holding part (22) and an upper holding part (40), between which a printed circuit board (30) is mounted.

Abstract: In order to fasten a silicon block on a support for improved further handling, fiber material is introduced into an adhesive joint between the silicon block and the support. The fiber material is impregnated with adhesive and consists of glass fibers. The silicon block is then positioned on the support. The fiber material assures that the adhesive joint is not pressed together too far and is more stable.

Abstract: A contacting device for a galvanization apparatus comprises contacting rollers with a continuous rigid external face, which is joined to a jacket section. The jacket section is provided with an inner opening that is wider than a rotating shaft on which the contacting roller sits. This allows the contacting roller to be moved in a radial direction, wherein electric contacting and securing of a basic position is obtained via springs in every one of the radially moved positions. The moveability of the contacting roller ensures good contact as the contacting roller rests against substrates also when the substrates are uneven. The contact pressure can be relatively small.

Abstract: In a method for the treatment of the surface of a wafer for producing a solar cell, onto which wafer an antireflection and passivation layer has been applied onto a p-doped layer in a step preceding the method, the surface is treated in a processing step and then a subsequent metallization on the surface of the wafer for producing contacts for the solar cell takes place. This processing step is for passivation or for removal of the p-doped layer in the region of disturbances such as scratches, defect sites, pinholes and inhomogeneous regions in the antireflection and passivation layer. It is thus possible to avoid metal depositions at these disturbances.

Abstract: In a method for detaching wafers from a carrier unit, the wafers being formed by sawing a wafer block fastened to the carrier unit by gluing, and the wafers themselves still being glued on one side, the carrier unit with the wafers is introduced into an ungluing unit along a uniform movement plane. It remains therein and is enclosed in an ungluing basin by movable wall parts. Solvent for ungluing is applied into the ungluing basin and onto the wafers after the formation and closing of the ungluing basin to dissolve the glued bond and subsequently detach the wafers from the carrier unit.

Abstract: In a method for the treatment of substrates (13) for solar cells composed of silicon, after multiple etching the substrates are cleaned (18) with DI water. Afterwards, the substrates (13) are dried and heated in drying stations (22, 25). The heated substrates (13) are subsequently oxidized in an oxidation station (30) by means of oxidation gas (34) with a proportion of ozone.

Abstract: A system (11) is designed to coat a film-like, long carrier (18) for thin-film solar cells on the absorber layer thereof with cadmium sulfide. To this end, the carrier (18) is continuously guided through a solution (23) made of cadmium acetate, ammonia and thiourea or is immersed into a bath (22) with said solution (23). By using a wide, very long and flat tub (24) containing the solution (23), the required amount for the coating is minimized, such that the consumption of solution (23) is low.

Abstract: A method for the selective doping of silicon of a silicon substrate (1) for producing a pn-junction in the silicon is characterized by the following steps: a) Providing the surface of the silicon substrate (1) with a doping agent (2) based on phosphorous, b) heating the silicon substrate (1) for creating a phosphorous silicate glass (2) on the surface of the silicon, wherein phosphorous diffuses into the silicon as a first doping (3), c) applying a mask (4) on the phosphorous silicate glass (2), covering the regions (5) that are later highly doped, d) removing the phosphorous silicate glass (2) in the non-masked regions, e) removing the mask (4) from the phosphorous silicate glass (2), f) again heating for the further diffusion of phosphorous from the phosphorous silicate glass (2) into the silicon as a second doping for creating the highly doped regions (5), g); complete removal of the phosphorous silicate glass (2) from the silicon.

Abstract: In order to fasten a silicon block on a support for improved further handling, fibre material is introduced into an adhesive joint between the silicon block and the support. The fibre material is impregnated with adhesive and consists of glass fibres. The silicon block is then positioned on the support. The fibre material assures that the adhesive joint is not pressed together too far and is more stable.

Abstract: In a method of separating wafers (12) from a vertical wafer stack (16), the wafers (12) are transported away individually from above via movement means (23). The movement means (23) include circulating belts (24), with a suction surface (25) against which the uppermost wafer (12) abuts, the abutment of the wafer against the suction surface (25) being enhanced by negative pressure. To separate a plurality of wafers (12) located one upon another, the movement means (23) are subjected to at least one of the following two steps: a) water (30) is forcefully jetted against the leading edge of the uppermost wafer (12), the water being directed obliquely from beneath the latter, or b) the movement means (23) guide the wafer (12) over a stripping device (32) which butts against the underside of the moving wafer and both forces the wafer against the suction surface (25) and generates a braking action thereon. Thereafter, the wafer (12) is moved to a transporting path (35, 37) to be transported for further processing.

Abstract: The invention relates to a device for treating the surfaces of silicon wafers, comprising transport rollers for transporting the silicon wafer, and at least one conveyor device which wets the surface of the silicon wafer with an aqueous medium on a transport plane which is determined by the transport rollers. The conveyor device is configured such that it can apply the process medium to the surface of the silicon wafer, which is oriented in a downward manner and which is arranged on the transport plane. Several suction pipes for suctioning gaseous or mist-like distributed process mediums from the area surrounding the conveyor device are provided. The suction pipes are arranged in the vertical direction below the transport plane.

Abstract: A method and device for treating silicon wafers. In a first step, the silicon wafers (22) are conveyed flat along a continuous, horizontal conveyor belt (12, 32) and nozzles (20) or the like spray an etching solution (21) from the top onto the wafers to texture them, only little etching solution (21) being applied to the silicon wafers (22) from below. In a second step, the silicon wafers (22), which are aligned as in the first step, are wetted exclusively from below with the etching solution (35) to etch-polish them.

Abstract: In order to transport printed circuit boards (30) through a processing system (12), printed circuit boards (30) lying one behind another can be connected by means of holding clips (22) to form a type of chain. The outer ends of the holding clips (22) are suspended on two spaced-apart transport chains (16) which provide for transport and mounting. The holding clips are formed in two parts with a lower holding part (22) and an upper holding part (40), between which a printed circuit board (30) is mounted.

Abstract: In a method for the production of a solar cell, a flat aluminium layer is applied to the back of a solar cell substrate. The aluminium is alloyed into the silicon substrate by the effect of the temperature and forms an aluminium BSF. The remaining aluminium that has not been alloyed into the silicon is subsequently removed. The aluminium BSF is transparent to light.

Abstract: A transport system for circuit boards (12) in treatment devices (11) which runs the circuit boards (12) between pairs of rollers (20, 21). The pairs of rollers are arranged in roller tracks (17, 18) running parallel to the edge of the circuit board (12) in a narrowly defined boundary region (16). The rollers are arranged with the axes (22) and shafts (23) thereof arranged at an angle (?) relative to the transport direction (14) or the perpendicular (35) thereof, such as to exert a tensile force on the circuit boards in the transverse direction thereof and thus stiffening the same. Transport through treatment, for example galvanization, etching, cleaning etc., without contact with the useful region (15) of the circuit board (12) is thus possible.

Abstract: The invention relates to a device for treating the surfaces of silicon wafers, comprising transport rollers for transporting the silicon wafers on a transport plane, which is determined by the transport rollers, and at least one conveyor device which wets the silicon wafer with an aqueous process medium. The conveyor device is arranged in such a manner below the transport plane that it touches the transport plane for wetting the substrate surface, which is oriented in the downward direction, with a process medium. The conveyor device is in direct contact with the substrate surface and is a roller with a larger diameter at its two ends for contacting the marginal areas at the underside of the silicon wafers for wetting them with the process medium.

Abstract: A method for processing or treating silicon material in carrying out a cleaning or purification process comprises the following steps: wetting bulk silicon material, facing a first direction with a first liquid process medium, automatic changing of an orientation of the bulk silicon material by turning bulk silicon material with a turning device and wetting the bulk silicon material in the altered orientation with the first liquid medium. After that, the bulk silicon material is cleaned in a corresponding cleaning device.