Abstract: A method of microfabrication includes forming a first relief pattern on a target layer of a substrate, coating the first relief pattern with a first solubility-shifting agent, layering a first polymeric fill on the first relief pattern, and diffusing the first solubility-shifting agent into the first polymeric fill to provide a solubility-shifted region of the first polymeric fill. Then the method includes forming a second relief pattern over the first relief pattern, coating the second relief pattern with a second solubility-shifting agent, layering a second polymeric fill on the second relief pattern, and diffusing the second solubility-shifting into the second polymeric fill to provide a solubility-shifted region of the second polymeric fill. Finally, the solubility-shifted regions of the first polymeric fill and the second polymeric fill are developed and the target layer is etched.

Abstract: A method of microfabrication includes providing a substrate having an existing pattern of features formed within a first layer, depositing a selective attachment agent on the substrate, wherein the selective attachment agent attaches to the features and includes a solubility-shifting agent, depositing a first resist on the substrate, activating the solubility-shifting agent such that a portion of the first resist over the features becomes soluble to a first developer, developing the first resist using the first developer such that a relief pattern having openings that expose the features of the existing layer is formed, growing a selective growth material on the features and within the openings of the relief pattern to provide self-aligned selective growth features, removing the first resist, depositing a fill layer on the substrate, and repeating the steps a predetermined number of times to provide a stacked device including a predetermined number of levels.

Abstract: A method of microfabrication includes forming a first relief pattern on a target layer of a substrate, coating the first relief pattern with a first solubility-shifting agent, layering a first polymeric fill on the first relief pattern, and diffusing the first solubility-shifting agent into the first polymeric fill to provide a solubility-shifted region of the first polymeric fill. Then the method includes forming a second relief pattern over the first relief pattern, coating the second relief pattern with a second solubility-shifting agent, layering a second polymeric fill on the second relief pattern, and diffusing the second solubility-shifting into the second polymeric fill to provide a solubility-shifted region of the second polymeric fill. Finally, the solubility-shifted regions of the first polymeric fill and the second polymeric fill are developed and the target layer is etched.

Abstract: A method of patterning a substrate includes providing a first relief pattern on a substrate, wherein the first relief pattern includes a first resist, coating the first relief pattern with a solubility-shifting agent, depositing a second resist on the first relief pattern such that the second resist is in contact with the first relief pattern, and diffusing the solubility-shifting agent a predetermined distance into the second resist to provide a solubility-shifted region of the second resist. The solubility-shifted region of the second resist borders the first relief pattern. Then, the method includes developing the second resist such that the solubility-shifted region is dissolved providing gaps between the first relief pattern and the second resist where a portion of the substrate is exposed and etching the substrate using the first relief pattern and the second resist as a combined etch mask.

Abstract: A method of microfabrication includes providing a first relief pattern on a target layer, wherein the first relief pattern comprises a first resist having a first etch selectivity, coating the first relief pattern with a solubility-shifting agent, depositing a second resist on the first relief pattern, wherein the second resist has a second etch selectivity that is different from the first etch selectivity, diffusing the solubility-shifting agent into the second resist to provide a solubility-shifted region of the second resist, developing the second resist such that the solubility-shifted region is dissolved providing gaps between the first relief pattern and the second resist where a portion of the target layer is exposed, and filling the gaps between the first relief pattern and the second resist with a fill material.

Abstract: A method of patterning a substrate is described. The method includes the steps of providing a resist layer on the substrate, exposing the resist later to a first pattern of actinic radiation to form a latent imagine in the resist layer, and exposing the resist layer to a second pattern of actinic radiation to form a second latent imagine in the resist later, wherein the first latent image and the second latent image are adjacent. The method further includes developing the resist layer to form a relief patten that includes a first set of trenches corresponding to the first pattern of actinic radiation and a second set of trenches corresponding to the second pattern of actinic radiation, wherein the first set of trenches and the second set of trenches are not contiguous.

Abstract: A method of microfabrication includes depositing a first layer of a first resist that includes a first chemical marker on a substrate, measuring a first fluorescence intensity of the first layer from the first fluorescent chemical marker, forming a first relief pattern from the first layer of the first resist, and measuring a second fluorescence intensity of the first layer from the first chemical marker subsequent to forming the first relief pattern. Then, the method includes depositing a solubility-shifting agent on the first relief pattern, depositing a second resist on the first relief pattern, diffusing the solubility-shifting agent into the second resist to provide a solubility-shifted region of the second resist, developing the second resist such that the solubility-shifted region of the second resist is dissolved and a portion of the substrate is exposed, and measuring a third fluorescence intensity of the first layer from the first chemical marker.

Abstract: A method of microfabrication includes providing a first relief pattern on a substrate, forming carbon—containing sidewall spacers—in the first relief pattern, removing the first relief pattern, and coating the carbon—containing sidewall spacers with a solubility—shifting agent. Then, the method includes depositing a first polymer fill on the carbon—containing sidewall spacers, diffusing the solubility—shifting agent a predetermined distance into the first polymer fill to provide a solubility—shifted region of the first polymer fill, wherein the solubility—shifted region of the first polymer fill borders the carbon—containing sidewall spacers, and developing the first polymer fill such that the solubility—shifted region is dissolved providing trenches between the carbon—containing sidewall spacers and the first polymer fill where a portion of the substrate is exposed.

Abstract: A method of patterning a substrate includes depositing an underlayer on the substrate, coating the underlayer with a solubility-shifting agent, layering a photoresist on the substrate, such that the photoresist covers the solubility-shifting agent and diffusing the solubility-shifting agent a predetermined distance into the photoresist to provide a solubility-shifted region of the photoresist, wherein the solubility-shifted region forms a footer layer in a bottom portion of the photoresist. Then, the method includes exposing the photoresist to a pattern of actinic radiation, developing the photoresist to form a relief pattern over the footer layer, wherein the relief pattern comprises structures separated by gaps, and etching the substrate to remove portions of the footer layer under the gaps, such that uniform structures are provided.

Abstract: A method of microfabrication includes providing a substrate having an existing pattern, wherein the existing pattern comprises features formed within a base layer such that a top surface of the substrate has features uncovered and the base layer is uncovered, depositing a selective attachment agent on the substrate, wherein the selective attachment agent includes a solubility-shifting agent, depositing a first resist on the substrate, activating the solubility shifting agent such that a portion of the first resist becomes insoluble to a first developer, developing the first resist using the first developer such that a relief pattern comprising openings is formed, wherein the openings expose the features of the existing layer, and executing a selective growth process that grows a selective-deposition material on the features and within the openings of the relief pattern to provide self-aligned selective deposition features.

Abstract: A method of microfabrication includes providing a substrate having an existing pattern, wherein the existing pattern includes features formed within a base layer such that a top surface of the substrate has features uncovered and the base layer is uncovered, depositing a selective attachment agent on the substrate, wherein the selective attachment agent comprises a solubility-shifting agent, depositing a first resist on the substrate, activating the solubility shifting agent such that a portion of the first resist becomes insoluble to a first developer, and developing the first resist using the first developer such that the portion of the first resist insoluble to the first developer remains.

Abstract: A method of patterning a substrate includes providing a first photoresist on a substrate, layering a second photoresist on the first photoresist, exposing the second photoresist to a first pattern of actinic radiation, and developing the second photoresist such that portions of the second photoresist are dissolved providing gaps between features of the second photoresist, wherein the gaps uncover portions of the first photoresist. Then, the method includes exposing the first photoresist to a second pattern of actinic radiation and developing the first photoresist such that portions of the uncovered portions of the first photoresist are dissolved providing gaps between the features of the first photoresist where a portion of the substrate is exposed.