Patents Assigned to Gen Co., Ltd.
  • Patent number: 9263237
    Abstract: The following description relates to a plasma processing apparatus and a method thereof. The plasma processing apparatus comprises a first plasma chamber having a first plasma discharge space, a first plasma source for supplying a first activation energy to the first plasma discharge space within the first plasma chamber, a second plasma chamber which is connected to the first plasma chamber and has a second discharge space, and a second plasma source for supplying a second activation energy for inducing inductive coupled plasma to the second plasma discharge space within the second plasma chamber.
    Type: Grant
    Filed: February 28, 2011
    Date of Patent: February 16, 2016
    Assignee: GEN CO., LTD.
    Inventor: Dae-Kyu Choi
  • Publication number: 20150059979
    Abstract: A plasma apparatus for vapor phase etching and cleaning, includes a reactor body configured to process a substrate; a direct plasma generation area in the reactor body, into which a process gas is introduced and in which plasma is directly induced to disassociate the process gas; a substrate processing area in the reactor body in which the substrate is processed by reactive species produced by reacting the disassociated process gas introduced from the direct plasma generation area with a vaporised gas introduced from the outside of the reactor body; a plasma induction assembly configured to induce plasma in the direct plasma generation area; and a gas distribution baffle, disposed between the direct plasma generation area and the substrate processing area, having a plurality of through holes through which the disassociated process gas is introduced from the direct plasma generation area to the substrate processing area.
    Type: Application
    Filed: January 27, 2014
    Publication date: March 5, 2015
    Applicant: Gen Co., Ltd.
    Inventors: Gyoo Dong KIM, Sung Yong KANG, Woo Gon SHIN
  • Patent number: 8888428
    Abstract: A method of manufacturing an insert nut having a diamond lattice structure comprises cutting and forging a metal rod and thus preparing a forged article having a flange and a nut body; pressing-in the forged article between a first thread rolling die formed with a first annular die protrusion and a left diagonal die protrusion for forming a left diagonal line of a diamond lattice and a second thread rolling die formed with a second annular die protrusion and a right diagonal die protrusion for forming a right diagonal line of the diamond lattice; and pressing the forged article with the thread rolling dies, and then moving up and down each of the thread rolling dies so that a plurality of diamond lattices and an annular protrusion are arranged on the external circumferential surface of the nut body.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: November 18, 2014
    Assignee: Gen Co., Ltd.
    Inventor: Won Sool Park
  • Publication number: 20140186139
    Abstract: The present invention relates to an insert nut having a diamond lattice structure, which can increase the pull out force, and a manufacturing method thereof. The method of manufacturing the insert nut having the diamond lattice structure, comprises cutting and forging a metal rod and thus preparing a forged article having a flange and a nut body; pressing-in the forged article between a first thread rolling die formed with a first annular die protrusion and a left diagonal die protrusion for forming a left diagonal line of a diamond lattice and a second thread rolling die formed with a second annular die protrusion and a right diagonal die protrusion for forming a right diagonal line of the diamond lattice; and pressing the forged article with the thread rolling dies, and then moving up and down each of the thread rolling dies so that a plurality of diamond lattices and an annular protrusion are arranged on the external circumferential surface of the nut body.
    Type: Application
    Filed: June 27, 2012
    Publication date: July 3, 2014
    Applicant: GEN CO., LTD.
    Inventor: Won Sool Park
  • Publication number: 20140083615
    Abstract: A plasma processing chamber includes a chamber body having a substrate support on which the substrate to be processed is placed, a dielectric window forming a ceiling of the chamber body, an inductive antenna set on a upper part of the dielectric window and configured to supply an electromotive force generating plasmas into the chamber body, a cooling water supplier configured to supply cooling water into the inductive antenna, a heating plate set on a upper part of the inductive antenna, and a heat conductive member filled in a space between the heating plate and the dielectric window to contact the heating plate, the inductive antenna and the dielectric window, wherein the heat conductive member makes the dielectric window to have a uniform heat distribution through the heat conduction between the inductive antenna and the dielectric window, and the heat conduction between the heating plate and the dielectric window.
    Type: Application
    Filed: March 14, 2013
    Publication date: March 27, 2014
    Applicant: GEN CO., LTD.
    Inventors: Gyoo-Dong KIM, Sung-Yong KANG
  • Patent number: 8409400
    Abstract: An inductive plasma chamber of the present invention comprises a plurality of discharge tube bridges connected between a discharge tube head and a process chamber. The discharge tube head is disc shaped and a cylindrical gas inlet which a gas is injected is disposed in its center. A susceptor on which a workpiece is placed is disposed inside a process chamber and a flange of upper certain area has an inclined surface which is upward centrally inclined. The discharge tube bridge is provided with at least one ferrite core, and the ferrite core has a winding connected to a power supply source. When a process gas is injected via the gas inlet and a RF power from the power supply source is supplied with a winding, the electromotive force is transmitted inside the discharge tube head, the discharge bridge and the process chamber so that the plasma discharge is occurred in the plasma chamber.
    Type: Grant
    Filed: April 28, 2004
    Date of Patent: April 2, 2013
    Assignee: Gen Co., Ltd.
    Inventor: Soon-Im Wi
  • Patent number: 7862681
    Abstract: Provided is a plasma processing system comprising: a plasma reactor generating plasma by receiving an input gas; and a radio frequency generator supplying radio frequency. The radio frequency generator supplies radio frequency power for plasma generation to the plasma reactor, wherein upon power interruption within a predetermined time occurring during the operation of the plasma reactor, the radio frequency generator re-supplies the radio frequency power, without discontinuing the operation of the plasma reactor, after power returns. Thereby, the plasma reactor stably maintains plasma upon momentary power interruption.
    Type: Grant
    Filed: February 27, 2007
    Date of Patent: January 4, 2011
    Assignee: Gen Co., Ltd.
    Inventor: Dae-Kyu Choi