Abstract: A multibeam coherent laser diode source comprises a master laser, a linear amplifier and two perpendicular amplifiers. The master laser and amplifiers are in the form of a single heterostructure containing an active layer, two limiting layers and a radiation influx area with an influx layer. The heterostructure is characterized by the ratio of the refractive index of the heterostructure to the refractive index of influx layer. This ratio is determined from a range extending from one plus delta to one minus gamma, where delta and gamma are defined by a number much less than one and gamma is greater than delta. The linear amplifier is positioned so that optical axis of radiation propagation from master laser coincides with the axis of the linear amplifier. Each perpendicular amplifier has output edge and is positioned so that its optical axis is situated at right angle to the axis of linear amplifier.

Abstract: Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face.

Abstract: Injection emitters (light-emitting diodes, superluminescent emitters) are used in the form of highly-efficient solid state radiation sources within a large wavelength range and for wide field of application, including general illumination using white light emitters provided with light-emitting diodes. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterized by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

Abstract: A multibeam coherent laser diode source comprises a master laser, a linear amplifier and two perpendicular amplifiers. The master laser and amplifiers are in the form of a single heterostructure containing an active layer, two limiting layers and a radiation influx area with an influx layer. The heterostructure is characterized by the ratio of the refractive index (n?) of the heterostructure to the refractive index (nBT) of the influx layer. The ratio n?:nBT is determined from a range extending from one plus delta to one minus gamma, where delta and gamma are defined by a number much less than one and gamma is greater than delta. The linear amplifier is positioned so that the optical axis of radiation propagation from the master laser coincides with the axis of the linear amplifier. Each perpendicular amplifier has an output edge and is positioned so that its optical axis is situated at a right angle to the axis of the linear amplifier.

Abstract: Invention relates to three types of laser light sources: diode laser, integral diode laser (in form of integrally connected diode lasers) and integral semiconductor optical amplifier (in form of integrally connected driving laser diode and semiconductor amplifier element), which amplifier consists of original optical resonator of diode laser and original laser radiation coupling. Two reflectors in optical resonator of diode laser, which falls into three types of above-mentioned laser radiation sources, have greatest possible reflection factor on both sides thereof and radiation coupling from active layer is carried out, by-passing active layer, through broadband semiconductor layers of the modified heterostructure of diode laser with practically fully antireflective (less than 0.01%) optical face.

Abstract: The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers.

Abstract: Injection radiators are used for pumping solid-state and fiber lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation and in the form of highly efficient general-purpose solid-state radiation sources used in a given waveband, including white light emitters used for illumination. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterised by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

Abstract: The heterostructures are used for creation of semiconductor injection emission sources: injection lasers, semiconductor amplifying elements, semiconductor optical amplifiers that are used in fiber optic communication and data transmission systems, in optical superhigh-speed computing and switching systems, in development of medical equipment, laser industrial equipment, frequency-doubled lasers, and for pumping solid-state and fiber lasers and amplifiers.

Abstract: Injection emitters (light-emitting diodes, superluminescent emitters) are used in the form of highly-efficient solid state radiation sources within a large wavelength range and for wide field of application, including general illumination using white light emitters provided with light-emitting diodes. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterized by a novel original and efficient method for emitting the radiation through the external surfaces thereof.

Abstract: Injection radiators are used for pumping solid-state and fibre lasers and amplifiers used for producing medical devices, laser production equipment, lasers generating a double-frequency radiation and in the form of highly efficient general-purpose solid-state radiation sources used in a given waveband, including white light emitters used for illumination. Said invention also relates to superpower highly-efficient and reliable injection surface-emitting lasers, which generate radiation in the form of a plurality of output beams and which are characterised by a novel original and efficient method for emitting the radiation through the external surfaces thereof.