Patents Assigned to General Plasma, Inc.
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Patent number: 11092245Abstract: A chamber valve (100) for use in processes requiring vacuum pressures has a compact design which minimizes the space needed for the valve in the travel direction. The chamber valve gate (116) is moveable between a first position in which the gate is offset from the portal (110), and a second position in which the gate is aligned with the portal. The gate will move into alignment with the portal while remaining within a plane parallel or nearly parallel to the portal.Type: GrantFiled: April 22, 2016Date of Patent: August 17, 2021Assignee: GENERAL PLASMA INC.Inventor: John E. Madocks
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Patent number: 10989343Abstract: A quick coupling for connecting fluid lines with one-handed push-to-connect and pull-to-disconnect operation is described. The quick coupling achieves this preferred functionality with a minimum number parts, the quick coupling having only one spring and one dynamic seal. In addition to fluid carrying applications the quick coupling can be used for tool holding and power transmission.Type: GrantFiled: April 25, 2016Date of Patent: April 27, 2021Assignee: General Plasma Inc.Inventor: John E. Madocks
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Patent number: 10811236Abstract: A rotary sputter magnetron assembly for use in sputtering target material onto a substrate is provided. The assembly comprises a longitudinally extending target tube having a longitudinal central axis, said target tube extending about a magnet array that is configured to generate a plasma confining magnetic field adjacent the target tube, said target tube supported for rotation about its longitudinal central axis and a pair of side shunts positioned parallel to the longitudinal central axis, and on opposing lengthwise sides of said target tube.Type: GrantFiled: October 26, 2015Date of Patent: October 20, 2020Assignee: General Plasma, Inc.Inventors: Phong Ngo, John E. Madocks
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Patent number: 10273570Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.Type: GrantFiled: June 13, 2016Date of Patent: April 30, 2019Assignee: General Plasma, Inc.Inventors: John E. Madocks, Patrick Lawrence Morse, Phong Ngo
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Patent number: 10134557Abstract: A linear anode layer ion source is provided that includes a top pole having a linear ion emitting slit. An anode under the top pole has a slit aligned with the top pole ion emitting slit. At least one magnet creates a magnetic field that passes through the anode slit. Wherein the width of the anode slit is 3 mm or less. A process of generating an accelerated ion beam is also provided that includes flowing a gas into proximity to said anode. By energizing a power supply electron flow is induced to the anode and the gas is ionized. Accelerating the ions from the anode through the linear ion emitting slit generates an accelerated ion beam by a process superior to that using a racetrack-shaped slit.Type: GrantFiled: June 12, 2014Date of Patent: November 20, 2018Assignee: General Plasma, Inc.Inventor: John E. Madocks
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Publication number: 20160289820Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.Type: ApplicationFiled: June 13, 2016Publication date: October 6, 2016Applicant: GENERAL PLASMA INC.Inventors: JOHN E. MADOCKS, PATRICK LAWRENCE MORSE, PHONG NGO
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Patent number: 9388490Abstract: An apparatus for coating a substrate is provided that includes a racetrack-shaped plasma source having two straight portions and at least one terminal turnaround portion connecting said straight portions. A tubular target formed of a target material that forms a component of the coating has an end. The target is in proximity to the plasma source for sputtering of the target material. The target is secured to a tubular backing cathode, with both being rotatable about a central axis. A set of magnets are arranged inside the cathode to move an erosion zone aligned with the terminal turnaround toward the end of the target as the target is utilized to deposit the coating on the substrate. Target utilization of up to 87 weight percent the initial target weight is achieved.Type: GrantFiled: October 26, 2010Date of Patent: July 12, 2016Assignee: General Plasma, Inc.Inventors: John E. Madocks, Patrick Lawrence Morse, Phong Ngo
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Patent number: 9136086Abstract: A process for modifying a surface of a substrate is provided that includes supplying electrons to an electrically isolated anode electrode of a closed drift ion source. The anode electrode has an anode electrode charge bias that is positive while other components of the closed drift ion source are electrically grounded or support an electrical float voltage. The electrons encounter a closed drift magnetic field that induces ion formation. Anode contamination is prevented by switching the electrode charge bias to negative in the presence of a gas, a plasma is generated proximal to the anode electrode to clean deposited contaminants from the anode electrode. The electrode charge bias is then returned to positive in the presence of a repeat electron source to induce repeat ion formation to again modify the surface of the substrate. An apparatus for modification of a surface of a substrate by this process is provided.Type: GrantFiled: December 8, 2009Date of Patent: September 15, 2015Assignee: GENERAL PLASMA, INC.Inventor: John E. Madocks
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Publication number: 20150235821Abstract: A clamp is provided that incorporates a plurality of flexible links with V flexures between the links to maintain even spacing of the links before and during installation. Each link has multiple segments joined around at least one flexure point, and a floating band surrounding the links to distribute clamping pressure that is produced along a circumference of contact points. The clamp provides evenly distributed clamping pressure by increasing the number of clamping contact points between the clamp and articles being joined. The clamp has non-limiting applications for clamping target tubes or as a vacuum flange for ISO fittings. A clamp can produce a vacuum tight seal between a target tube and end block or end support flange of a rotary magnetron without resort to tools, and as such is rapidly secured in place.Type: ApplicationFiled: September 19, 2013Publication date: August 20, 2015Applicant: GENERAL PLASMA, INC.Inventors: John E. Madocks, Ryan Lohrenz, Steven Smith, SR.
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Patent number: 9103018Abstract: A sputter coating apparatus for sputter coating a substrate in a processing chamber includes a target of sputter coating material supported within the processing chamber. The target has a sputtering surface and a back surface. The target is affixed to a backing plate such that the back surface of the target is disposed adjacent to a first surface of the backing plate. The backing plate is in fluid communication with a source of cooling fluid. The target back surface has a first layer selected to have a high thermal emissivity coefficient. The backing plate first surface carries a second layer having a high emissivity coefficient. The target back surface first layer and the backing plate first surface second layer provide enhanced heat transfer between the target and the backing plate via thermal radiation.Type: GrantFiled: May 10, 2010Date of Patent: August 11, 2015Assignee: GENERAL PLASMA, INC.Inventors: John Madocks, Mark A. George
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Patent number: 8535490Abstract: A new and useful rotatable sputter magnetron assembly is provided, that addresses the issue of uneven wear of the target electrode tube. According to the principles of the present invention, a rotatable sputter magnetron assembly for use in magnetron sputtering target material onto a substrate comprises a. a longitudinally extending tubular shaped target electrode tube having a longitudinal central axis, b. the target electrode tube extending about a magnet bar that is configured to generate a plasma confining magnetic field adjacent the target electrode tube, c. the magnet bar being held substantially stationary within the target electrode tube, and d. the target electrode tube supported for rotation about its longitudinal central axis and for axial movement along its longitudinal central axis, so that wear of the target electrode tube can be controlled by moving the target electrode tube axially during magnetron sputtering of the target material.Type: GrantFiled: June 6, 2008Date of Patent: September 17, 2013Assignee: General Plasma, Inc.Inventors: John Madocks, Patrick Lawrence Morse
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Publication number: 20130220797Abstract: A method for operating a moving magnet magnetron is provided enhanced target utilization. A magnet pack is moved in a first 2-D motion profile with a variable velocity. The magnet pack is then translated in a second 2-D motion profile that varies relative to the first profile. This process moving and translating is repeated to provide enhanced target utilization. These varied movement and translation profiles preclude the formation of a diamond-shaped erosion area common to the prior art. Representative to such profiles are intersecting sigmoidal curves. The resultant target is characterized by a metal from that has better target utilization as the wear pattern precludes the diamond shaped erosion area common to the prior art and instead has a multiple erosion peaks.Type: ApplicationFiled: May 19, 2011Publication date: August 29, 2013Applicant: GENERAL PLASMA, INC.Inventor: Phong Ngo
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Patent number: 8304744Abstract: A closed drift ion source is provided, having an anode that serves as both the center magnetic pole and as the electrical anode. The anode has an insulating material cap that produces a closed drift region to further increase the electrical impedance of the source. The ion source can be configured as a round, conventional ion source for space thruster applications or as a long, linear ion source for uniformly treating large area substrates. A particularly useful implementation uses the present invention as an anode for a magnetron sputter process.Type: GrantFiled: October 19, 2007Date of Patent: November 6, 2012Assignee: General Plasma, Inc.Inventor: John Eric Madocks
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Publication number: 20110236591Abstract: A process for powering an electrical load includes applying a rectified alternating current waveform across the load for a first time period with only a single power supply for at least two half cycles. At least one half cycle of an alternating current waveform of opposite polarity are then applied relative to the rectified alternating current waveform across the load for a second time period. Rectified alternating current waveform is then again applied across the load for at least two half cycles for a third time period to power the electrical load. The rectified alternating current waveform can be applied a direct current offset. A power supply is provided for provided power across the load according to this process.Type: ApplicationFiled: November 30, 2009Publication date: September 29, 2011Applicant: General Plasma INc.Inventors: John E. Madocks, Curtis Charles Camus, Patrick Marcus
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Patent number: 7993496Abstract: In some embodiments, the invention includes a cylindrical cathode target assembly for use in sputtering target material onto a substrate that comprises a generally cylindrical target, means for rotating the target about its axis during a sputtering operation, an elongated magnet carried within the target for generation of a plasma-containing magnetic field exterior to but adjacent the target, a framework for supporting the magnet against rotation within the target, and a power train for causing the magnet to oscillate within and axially of the target in a substantially asynchronous manner to promote generally uniform target utilization along its length, as well as its method of use. In some embodiments, the magnet is oscillated in response to rotation of the target.Type: GrantFiled: June 30, 2005Date of Patent: August 9, 2011Assignees: Cardinal CG Company, General Plasma, Inc.Inventors: Klaus Hartig, Steve E. Smith, John E. Madocks
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Patent number: 7932678Abstract: A magnetic mirror plasma source includes a gap separating a substrate from a cathode. A mirror magnetic field extends between the substrate and the cathode through the gap. The magnetic field lines at a proximal surface of the substrate are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field.Type: GrantFiled: September 13, 2004Date of Patent: April 26, 2011Assignee: General Plasma, Inc.Inventor: John Madocks
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Publication number: 20100207529Abstract: A closed drift ion source is provided, having an anode that serves as both the center magnetic pole and as the electrical anode. The anode has an insulating material cap that produces a closed drift region to further increase the electrical impedance of the source. The ion source can be configured as a round, conventional ion source for space thruster applications or as a long, linear ion source for uniformly treating large area substrates. A particularly useful implementation uses the present invention as an anode for a magnetron sputter process.Type: ApplicationFiled: October 19, 2007Publication date: August 19, 2010Applicant: General Plasma, Inc.Inventor: John Eric Madocks
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Publication number: 20090032393Abstract: A new and useful plasma source is provided, comprising at least one electrode connected to an alternating current power supply and disposed adjacent to a portion of a grounded substrate. The electrode has a center magnet that produces a magnetron plasma at the electrode when the electrode is biased negative by the alternating power supply, and a mirror plasma on the substrate when the electrode is biased positive by the alternating power supply.Type: ApplicationFiled: March 16, 2007Publication date: February 5, 2009Applicant: General Plasma, Inc.Inventor: John Madocks