Abstract: The present invention provides a semiconductor device packaging assembly and method for manufacturing the assembly. Preferably, the method of the present invention is used to assemble a plurality of semiconductor chips, such that the throughput of assembly can be enhanced. The method comprises the steps of: providing a bottom frame matrix including a plurality of bottom frame units, each of which unit comprises a bottom supporting portion and a bottom frame portion; providing a bridge frame including a plurality of bridge frame units, each of which unit comprises a bridge frame portion and a plurality of conducting bars; placing each of the semiconductor chips on each of the bottom supporting portions, respectively; and bonding each bottom frame unit and each bridge frame unit together, wherein, the conducting bars extending from each bridge frame portion toward corresponding chips are electrically coupled to bonding areas of the corresponding chips.

Abstract: The present invention discloses a power semiconductor device manufactured using a chip-size package. The power semiconductor device includes a die having a first surface and a second surface opposite to the first surface; at least one lead frame, each of the at least one lead frames having a first terminal and a second terminal, the first terminal electrically connected to a corresponding terminal of the first surface or a corresponding terminal of the second surface of the die; an electrically conductive plate electrically connected to a corresponding terminal of the second surface of the die; and a packaging material used to encapsulate the die, one terminal of the lead frame and the electrically conductive plate. The second terminal of each lead frame and a surface of the electrically conductive plate opposite to the surface electrically connected to the second surface of the die are exposed to the outside of the packaging material and lie on the same plane.

Abstract: This invention is related to an apparatus for attaching resists and wafers to substrates, including: first and a second moving devices for moving substrates and wafers respectively; a first tank for containing an adhesive agent; a dispensing device which dispenses a predetermined amount of the adhesive agent at the central region of the wafer; a third moving device for placing the substrate on the wafer, a compressing device which compresses the substrate to squeeze out any possible air bubble existing within the adhesive agent between the substrate and the wafer; a second tank for containing the adhesive agent; a fourth moving device for moving the attached substrate and the wafer together to the second tank such that the complete area of the wafer at the side thereof opposite to the substrate is covered with the adhesive agent in an appropriate amount; a mold having a plurality of cavities arranged in a required pattern; a supplying device for providing a plurality of resists on the mold; a shake-and-load d

Abstract: The present invention provides a semiconductor device packaging assembly and method for manufacturing the assembly. Preferably, the method of the present invention is used to assemble a plurality of semiconductor chips, such that the throughput of assembly can be enhanced, by providing a bottom frame matrix including a plurality of bottom frame units, each of which unit includes a bottom supporting portion and a bottom frame portion; providing a bridge frame including a plurality of bridge frame units, each of which unit includes a bridge frame portion and a plurality of conducting bars; placing each of the semiconductor chips on each of the bottom supporting portions, respectively; and bonding each bottom frame unit and each bridge frame unit together, wherein, the conducting bars extending from each bridge frame portion toward corresponding chips are electrically coupled to bonding areas of the corresponding chips.

Abstract: A termination structure for power trench MOS devices is disclosed. The MOS devices can be Schottky diode, IGBT or DMOS depending on what kinds of the semiconductor substrate are prepared. The termination structure comprises: a semiconductor substrate having a trench formed therein; a spacer-like MOS gate formed on a sidewall of the trench; a termination structure oxide layer formed in the trench to cover a portion of the spacer-like MOS gate and to cover a bottom of the trench; and a first electrode and a second electrode are, respectively, formed on a bottom surface and upper surface of the semiconductor substrate. The trench is formed from a boundary of the active region to an edge of the semiconductor substrate. The trench MOS devices are formed in the active region. In addition for IGBT and DMOS, the second electrode is isolated from MOS gate by an oxide layer; however, for Schottky diode, the second electrode is directed contact to the MOS gate.

Abstract: A wafer-level process for fabricating a plurality of passivated semiconductor devices comprising the steps of providing a semiconductor wafer on that at least one p-n junction is formed, Cutting a plurality of grooves in said wafer to expose said at least one p-n junction, wherein each of said grooves extends partly through the wafer and has a depth that is enough to expose said at least one p-n junction, applying a passivating material into said grooves and curing the material. The grooves can be formed by using a disc saw having a blade, by performing a sandblasting operation within a controlled operation time, or by performing a photolithographically chemical etching process. The passivating material is either screen-printed or pin-dispensed into the grooves. A dicing operation can be subsequently proceeded to divide the wafer into individual chips for subsequent fabrication into completed semiconductor devices.

Abstract: A process for recycling a reaction system of electroplating passivation of wafers, in which lanthanum hydroxide (La(OH)3) or magnesium hydroxide (Mg(OH)2) is added to supplement the lanthanum ion or magnesium ion consumed in an electroplating solution when the pH of the electroplating solution decreases to a range from 0.1 to 0.4.