Abstract: An embodiment relates to a n-type planar gate DMOSFET comprising a Silicon Carbide (SiC) substrate. The SiC substrate includes a N+ substrate, a N? drift layer, a P-well region and a first N+ source region within each P-well region. A second N+ source region is formed between the P-well region and a source metal via a silicide layer. During third quadrant operation of the DMOSFET, the second N+ source region starts depleting when a source terminal is positively biased with respect to a drain terminal. The second N+ source region impacts turn-on voltage of body diode regions of the DMOSFET by establishing short-circuitry between the P-well region and the source metal when the second N+ source region is completely depleted.

Abstract: A device having reduced Rds(on) is described. The device comprises a unit cell. The unit cell comprises: a first region, a second region, a third region, and a fourth region. The fourth region is residing on the first region, the second region, and the third region. The second region connects the first region and the third region. The first region, the second region and the third region are of same conductivity type (e.g., second conductivity type). In an embodiment, the fourth region comprises a fifth region and a sixth region. The fourth region, the fifth region, and the sixth region are of same conductivity type (e.g., first conductivity type). The fourth region is on the first region. The fifth region is on the second region. The sixth region is on the third region. In an embodiment, the device achieves reduced Rds(on) by relaxing the JFET constraint.

Abstract: An embodiment relates to a n-type planar gate DMOSFET comprising a Silicon Carbide (SiC) substrate. The SiC substrate includes a N+ substrate, a N? drift layer, a P-well region and a first N+ source region within each P-well region. A second N+ source region is formed between the P-well region and a source metal via a silicide layer. During third quadrant operation of the DMOSFET, the second N+ source region starts depleting when a source terminal is positively biased with respect to a drain terminal. The second N+ source region impacts turn-on voltage of body diode regions of the DMOSFET by establishing short-circuitry between the P-well region and the source metal when the second N+ source region is completely depleted.

Abstract: An embodiment relates to a device comprising a first section and a second section. The first section comprises a first metal oxide semiconductor (MOS) interface comprising a first portion and a second portion. The first portion comprises a first contact with a horizontal surface of a semiconductor substrate and the second portion comprises a second contact with a trench sidewall of a trench region of the semiconductor substrate. The second section comprises one of a second metal oxide semiconductor (MOS) interface and a metal region. The second MOS interface comprises a third contact with the trench sidewall of the trench region. The metal region comprises a fourth contact with a first conductivity type drift layer. The first section and the second section are located contiguously within the device along a lateral direction.

Abstract: An embodiment relates to a n-type planar gate DMOSFET comprising a Silicon Carbide (SiC) substrate. The SiC substrate includes a N+ substrate, a N? drift layer, a P-well region and a first N+ source region within each P-well region. A second N+ source region is formed between the P-well region and a source metal via a silicide layer. During third quadrant operation of the DMOSFET, the second N+ source region starts depleting when a source terminal is positively biased with respect to a drain terminal. The second N+ source region impacts turn-on voltage of body diode regions of the DMOSFET by establishing short-circuitry between the P-well region and the source metal when the second N+ source region is completely depleted.

Abstract: An embodiment relates to a method obtaining a silicon carbide wafer comprising a first conductivity type substrate and a first conductivity type drift layer, forming a second conductivity type first well region within the first conductivity type drift layer, forming a first conductivity type source region within the second conductivity type first well region, forming a second conductivity type plug region under the first conductivity type source region, forming a gate oxide layer, forming a patterned gate metal layer, depositing an interlevel dielectric (ILD) layer, forming a first patterned mask layer on top of the ILD layer, and etching the ILD layer and the first conductivity type source region using the first patterned mask layer, and forming a silicide layer, wherein the silicide layer is in contact with a vertical sidewall of the first conductivity type source region and at-least one second conductivity type region.

Abstract: A metal-oxide-semiconductor field-effect transistor (MOSFET) device is described herein. The MOSFET device comprises a unit cell on a silicon carbide (SiC) substrate. The unit cell comprises: a source region; a well region; and a source attachment region. The source attachment region is in contact with the source region. The source attachment region is doped using first conductivity type ions. In an embodiment, the source attachment region is doped using second conductivity type ions. The source attachment region comprises a depth shallower than a depth of source region. In an embodiment, the source attachment region comprises a depth equal to a depth of the source region. The source attachment region comprises a doping concentration lower than a doping concentration of the source region. In an embodiment, the source attachment region comprises a doping concentration equal to a doping concentration of the source region.

Abstract: An embodiment relates to a method comprising obtaining a SiC substrate comprising a N+ substrate and a N? drift layer; depositing a first hard mask layer on the SiC substrate and patterning the first hard mask layer; performing a p-type implant to form a p-well region; depositing a second hard mask layer on top of the first hard mask layer; performing an etch back of at least the second hard mask layer to form a sidewall spacer; implanting N type ions to form a N+ source region that is self-aligned; and forming a MOSFET.

Abstract: An embodiment relates to a device comprising a first section and a second section. The first section comprises a first metal oxide semiconductor (MOS) interface comprising a first portion and a second portion. The first portion comprises a first contact with a horizontal surface of a semiconductor substrate and the second portion comprises a second contact with a trench sidewall of a trench region of the semiconductor substrate. The second section comprises one of a second metal oxide semiconductor (MOS) interface and a metal region. The second MOS interface comprises a third contact with the trench sidewall of the trench region. The metal region comprises a fourth contact with a first conductivity type drift layer. The first section and the second section are located contiguously within the device along a lateral direction.

Abstract: An embodiment relates to a n-type planar gate DMOSFET comprising a Silicon Carbide (SiC) substrate. The SiC substrate includes a N+ substrate, a N? drift layer, a P-well region and a first N+ source region within each P-well region. A second N+ source region is formed between the P-well region and a source metal via a silicide layer. During third quadrant operation of the DMOSFET, the second N+ source region starts depleting when a source terminal is positively biased with respect to a drain terminal. The second N+ source region impacts turn-on voltage of body diode regions of the DMOSFET by establishing short-circuitry between the P-well region and the source metal when the second N+ source region is completely depleted.

Abstract: An embodiment relates to a method and manufacture of robust, high-performance devices. The method comprises preparing a unit cell of a Silicon Carbide (SiC) substrate comprising a first conductivity type substrate and a first conductivity type drift layer; forming a second conductivity type well region; forming a first conductivity type source region within the second conductivity type well region; and forming a second conductivity type shield region surrounding the first conductivity type source region. The second conductivity type shield region formed comprises a portion of the second conductivity type shield region located on a SiC surface.

Abstract: An embodiment relates to a semiconductor component, comprising a semiconductor body of a first conductivity type comprising a voltage blocking layer and islands of a second conductivity type on a contact surface and optionally a metal layer on the voltage blocking layer, and a first conductivity type layer comprising the first conductivity type not in contact with a gate dielectric layer or a source layer that is interspersed between the islands of the second conductivity type.

Abstract: A device is described herein. The device comprises a unit cell of a silicon carbide (SiC) substrate. The unit cell comprises: a trench in a well region having a second conduction type. The well region is in contact with a region having a first conduction type to form a p-n junction. A width of the trench is less than 1.0 micrometers (?m). A width of the unit cell is one of less than and equal to 5.0 micrometers (?m). The device comprises a source region comprising the first conduction type. The device further comprises a metal oxide semiconductor field effect transistor component. The device described herein comprises a reduced unit cell pitch and reduced channel resistance without any compromise in channel length. The device comprises an ILD opening greater than or equal to width of the trench.

Abstract: A device is described herein. The device comprises a unit cell of a silicon carbide (SiC) substrate. The unit cell comprises: a trench in a well region having a second conduction type. The well region is in contact with a region having a first conduction type to form a p-n junction. A width of the trench is less than 1.0 micrometers (?m). A width of the unit cell is one of less than and equal to 5.0 micrometers (?m). The device comprises a source region comprising the first conduction type. The device further comprises a metal oxide semiconductor field effect transistor component. The device described herein comprises a reduced unit cell pitch and reduced channel resistance without any compromise in channel length. The device comprises an ILD opening greater than or equal to width of the trench.

Abstract: An embodiment relates to a device comprising a first section and a second section. The first section comprises a first metal oxide semiconductor (MOS) interface comprising a first portion and a second portion. The first portion comprises a first contact with a horizontal surface of a semiconductor substrate and the second portion comprises a second contact with a trench sidewall of a trench region of the semiconductor substrate. The second section comprises one of a second metal oxide semiconductor (MOS) interface and a metal region. The second MOS interface comprises a third contact with the trench sidewall of the trench region. The metal region comprises a fourth contact with a first conductivity type drift layer. The first section and the second section are located contiguously within the device along a lateral direction.

Abstract: An embodiment relates to a method and manufacture of robust, high-performance devices. The method comprises preparing a unit cell of a Silicon Carbide (SiC) substrate comprising a first conductivity type substrate and a first conductivity type drift layer; forming a second conductivity type well region; forming a first conductivity type source region within the second conductivity type well region; and forming a second conductivity type shield region surrounding the first conductivity type source region. The second conductivity type shield region formed comprises a portion of the second conductivity type shield region located on a SiC surface.

Abstract: A device is described herein. The device comprises a unit cell of a silicon carbide (SiC) substrate. The unit cell comprises: a trench in a well region having a second conduction type. The well region is in contact with a region having a first conduction type to form a p-n junction. A width of the trench is less than 1.0 micrometers (?m). A width of the unit cell is one of less than and equal to 5.0 micrometers (?m). The device comprises a source region comprising the first conduction type. The device further comprises a metal oxide semiconductor field effect transistor component. The device described herein comprises a reduced unit cell pitch and reduced channel resistance without any compromise in channel length. The device comprises an ILD opening greater than or equal to width of the trench.

Abstract: An embodiment relates to a method comprising obtaining a SiC substrate comprising a N+ substrate and a N? drift layer; depositing a first hard mask layer on the SiC substrate and patterning the first hard mask layer; performing a p-type implant to form a p-well region; depositing a second hard mask layer on top of the first hard mask layer; performing an etch back of at least the second hard mask layer to form a sidewall spacer; implanting N type ions to form a N+ source region that is self-aligned; and forming a MOSFET.

Abstract: An embodiment relates to a device comprising a unit cell on a SiC substrate, the unit cell comprising a gate insulator film, a trench in the well region, and a first sinker region of a second conduction type, wherein the first sinker region has a depth that is equal to or greater than a depth of a well region; wherein the device has an on-resistance of less than 3 milliohm-cm2, a gate threshold voltage of greater than 2.8V, a breakdown voltage of greater than 1450V, and an electric field of less than 3.5 megavolt/cm in the gate insulator film at a drain voltage of less than or equal to 1200 V.

Abstract: An embodiment relates to a device comprising SiC, the device having a p-shield region that is outside a junction gate field-effect transistor region, wherein a doping concentration in a p-well region within a MOSFET channel is non-uniform. Another embodiment relates to a device comprising SiC, the device having a p-shield region, wherein a doping concentration in a p-well region within a MOSFET channel is non-uniform, wherein at least a portion of the p-shield region is located within the p-well region.