Abstract: A method of chemically depositing a copper film in which a bromine or iodine-containing catalyst component is employed to enhance the deposition rate. The present invention is characterized in that the catalyst component floats on the film surface during the film formation. Accordingly, a film deposition having superior step coverage and high deposition rate is obtained.

Abstract: A gas feeding system for applications such as chemical vapor deposition (CVD) is provided. The gas feeding system comprises a plurality of reactant source supply apparatuses that are connected to a reactor to supply different reactant sources therein discontinuously or sequentially. The gas feeding system includes a pass valve that is disposed in a supply tube between inlet and outlet valves of the reservoir for containing the reactant source. With the pass valve, the carrier gas passing therethrough flows into the reactor or the evacuation valve without passing through the reservoir when the inlet valve and outlet valve are closed to prevent the waste of non-use reactant sources. With the present invention gas feeding system, the uniformity and quality of the deposited film can be improved and the waste of reactant source can be reduced.

Abstract: A method for forming a three-component film containing metal, silicon and nitrogen for use in semiconductor devices on a substrate. The method of the present invention comprises the steps of: preparing separate reactive gases each including at least one selected from the group consisting of a gaseous metal compound, a gaseous silicon compound and an ammonia gas under conditions such that the gaseous meta compound and the ammonia gas does not form a mixture; determining a sequential gas supply cycle of the reactive gases so that supplies of the gaseous metal compound, the gaseous silicon compound and the ammonia gas are each included at least once within one gas supply cycle; and applying the reactive gases to the substrate by repeating the gas supply cycle at least once. According to the present invention, a three-component nitride film can be formed with a uniform thickness despite unevenness of a semiconductor substrate surface.

Abstract: Method and apparatus for chemically mechanically polishing semiconductor substrates with enhanced durability, reliability and polishing effectiveness. In the method of the present invention, the substrate and the pad respectively orbits to guarantee uniform polishing across the substrate in principle. The apparatus of the present invention employing the above method is mechanically stable to enhance process reliability.

Abstract: A method of forming copper conductors for interconnecting active and passive elements as well as signal and power lines for circuits and devices on silicon wafers is disclosed. The method disclosed herein involves with using catalysts in conjunction with a chemical vapor deposition(CVD) process with typically using copper as a source material for forming interconnecting conductors. Interconnecting method for filling trenches, via holes, contacts, large trenches and holes for power devices and lines as well as for forming large passive elements is also disclosed. Disclosed herein are also a method of filling narrow and deep trenches and small in diameter and deep holes, and a method of forming very thin film on the flat top surface so that an etchback process, such as wet or dry etchback as well as plasma etchback processes, can be used for removing a thin film in preparation for subsequent processing steps, thereby rather expensive chemical mechanical polishing(CMP) process need not be used.