Abstract: A current sense circuit (100) includes a semiconductor power switch such as a MOSFET (102) having a source metallization contact pad (14) with a conductor jumper bond wire (106) directly connected thereto in the MOSFET module housing (104), which bond wire is connected to a source terminal lead frame within the module, which lead frame extends externally of the module for connection to a load (22) and load voltage (24). The current sense circuitry includes amplifier circuitry (150, 168) having first and second inputs (122, 124) connected to the source bond wire (106) at spaced points (126, 128) along the bond wire within the module housing (104) without insertion of additional series shunt resistance in the bond wire (106) between such points (126, 128), and sensing current flow through the bond wire (106) by sensing voltage between such points (126, 128) and amplifying such voltage.

Abstract: In an electric circuit assembly (2) having conductive lead frames (8-10) directly bonded to an insulating substrate (6) by a eutectic, the lead frames are further subjected to a work hardening step (32, 34) to stiffen the lead frames and enable push-on fastener connection (12) to the lead frames without collapse thereof.

Abstract: A power MOSFET linear amplifier includes a plurality of paralleled MOSFETS having a gate-to-source resistor to ensure simultaneous turn-on and sharing of the load current. An arc lamp is connected in series with a 400 volt power supply and a variable ballast element in the form of the power MOSFET linear amplifier. The linear amplifier includes four similar modules. Each module is a hybrid circuit constructed with eight MOSFETs connected in parallel. Each MOSFET includes a similar gate-to-source resistor in addition to an appropriate gate resistor and source resistor. Under operating load current conditions, the gate-to-source resistors are laser trimmed to establish precise equalized current sharing in response to the specified operating input voltages. The module is set with the gate voltage slightly above the operating threshold voltage range of the MOSFET.

Abstract: A resistor comprises a ceramic plate on the opposite surfaces of which a thick film is arranged in a pattern forming respective electrically resistive circuits which are connected by continuing the film or coating over the edge of the substrate plate or by using a bonded metal clip to bridge the gap between the resistive circuits on the opposite surfaces.

Abstract: An electric control device having a high power thick film controlled circuit including a photon activated switch all on an insulating substrate. A photon emitting control element in a low power control circuit is supported from strips extending from the lead frame of the device. The strips are bendable, allowing the emitting element to be folded over the photon activated switch to thereby establish optical coupling and electrical isolation between the control and the controlled circuits.

Abstract: The lead frame for a thick film circuit has inwardly extending strip portions of substantial area which are positioned and dimensioned to substantially match and overlie selected thick film conductors to increase the current carrying capacity thereof and to act as mounting elements and heat diffusers for diodes, SCRs (silicon controlled rectifiers) and other heat-generating components.