Patents Assigned to Georgia Tech Applied Research Corporation
  • METHOD OF FORMING LIGHT EMITTING DIODE WITH HIGH-SILICA SUBSTRATE
    Publication number: 20170207372
    Abstract: A method of making an LED device and an LED device using a high-silica, fully-sintered glass substrate is provided. The high-silica substrate is at least 99% silica and is thin, such as less than 200 ?m in thickness. A phosphor containing layer is deposited on to the substrate and is laser sintered on the substrate such that a portion of the sintered phosphor layer embeds in the material of the substrate.
    Type: Application
    Filed: January 11, 2017
    Publication date: July 20, 2017
    Applicant: Georgia Tech Applied Research Corporation
    Inventors: Daniel Warren Hawtof, Archit Lal, Xinghua Li, Hisham Menkara, William Judson Ready, IV, Brent Karl Wagner