Patents Assigned to Georgia Tech Research
-
Publication number: 20130278295Abstract: An apparatus for measuring a high speed signal may comprise a plurality of Analog-Digital converters (AD converter) that are arranged in parallel to each other to sample an input signal at different frequencies; a plurality of frequency synthesizers configured to provide each AD converter with a different sampling frequency; a signal processor configured to receive an output of the plurality of AD converters to reconstruct the input signal; and/or a controller configured to receive and process a trigger signal.Type: ApplicationFiled: February 19, 2013Publication date: October 24, 2013Applicants: GEORGIA TECH RESEARCH CORPORATION, SAMSUNG ELECTRONICS CO., LTD.Inventors: Sung Yeol KIM, Hyun Woo CHOI, Nicholas TZOU, Xian WANG, Thomas MOON, Abhijit CHATTERJEE, Ho Sun YOO
-
Patent number: 8566928Abstract: A system and method for detecting a first network of compromised computers in a second network of computers, comprising: collecting Domain Name System (DNS) data for the second network; examining the collected data relative to DNS data from known comprised and/or uncompromised computers in the second network; and determining the existence of the first network and/or the identity of compromised computers in the second network based on the examination.Type: GrantFiled: October 3, 2006Date of Patent: October 22, 2013Assignee: Georgia Tech Research CorporationInventors: David Dagon, Nick Feamster, Wenke Lee, Robert Edmonds, Richard Lipton, Anirudh Ramachandran
-
Patent number: 8564435Abstract: Various sensors, systems, and methods for monitoring environmental conditions are provided. In one embodiment, among others, a passive sensor includes an antenna; a modulating circuit coupled to the antenna by a microstrip transmission line, the modulating circuit capable of modulating a backscattered signal; a sensing material disposed between the microstrip transmission line and a ground plane of the passive sensor, where an electrical property of at least a portion of the sensing material varies with the environmental condition; and where the modulated backscattered signal includes at least one of phase and amplitude information corresponding to the electrical property of the portion of the sensing material.Type: GrantFiled: June 24, 2009Date of Patent: October 22, 2013Assignee: Georgia Tech Research CorporationInventors: Gregory David Durgin, Andrew F. Peterson, Azhar Hason
-
Patent number: 8565117Abstract: A network may include a plurality of nodes forming a first layer and a sub-set of the plurality of nodes forming a second layer. The first layer may follow a first routing objective in routing traffic, and the second layer may develop constraints based on the first routing objective and follow a second routing objective within the developed constraints in routing traffic. In another network, the second layer may follow a second routing objective in routing traffic, and the first layer may develop constraints based on the second routing objective and follow a first routing objective within the developed constraints in routing traffic.Type: GrantFiled: January 15, 2008Date of Patent: October 22, 2013Assignees: Alcatel Lucent, Georgia Tech Research CorporationInventors: Volker Friedrich Hilt, Markus Andreas Hofmann, Srinivasan Seetharaman, Mostafa H. Ammar
-
Patent number: 8563365Abstract: An exemplary embodiment of the present invention provides a chip for use in fabricating a three-dimensional integrated circuit, the chip comprising a wafer, one or more metallic-filled, electrical vias, and one or more hollow, fluidic vias. The wafer can comprise a first surface and a second surface. The one or more metallic-filled, electrical vias can extend through the wafer. Each electrical via can be in electrical communication with an electrical interconnect proximate the first surface, providing electrical communication between chips in the integrated circuit. The one or more hollow, fluidic vias can extend through the wafer. Each fluidic via can be in fluid communication with a fluidic interconnect, providing fluid communication between adjacent chips in the integrated circuit. Each fluidic interconnect can comprise a first end proximate the first surface, a second end, and a cap proximate the second end, defining an air-filled space within the fluidic interconnect.Type: GrantFiled: March 9, 2012Date of Patent: October 22, 2013Assignee: Georgia Tech Research CorporationInventors: Calvin Richard King, Jr., Jesal Zevari, James D. Meindl, Muhannad S. Bakir
-
Patent number: 8562806Abstract: Improved electrochemical biosensor arrays and instruments are disclosed herein. Methods of making and using the electrochemical biosensor instruments are also disclosed. An electrochemical biosensor array can include an array of microelectrodes disposed on a substrate. Each microelectrode can include a conducting electrode material disposed on a portion of the substrate, a first polymeric layer disposed on at least a portion of the conducting electrode material, a second polymeric layer disposed on at least a portion of the first polymeric layer, and a capture molecule that is in physical communication with the second polymeric layer.Type: GrantFiled: July 31, 2008Date of Patent: October 22, 2013Assignee: Georgia Tech Research CorporationInventors: Jiri Janata, Miroslava Josowicz, George Yang Yu
-
Publication number: 20130270695Abstract: The various embodiments of the present invention provide a stress-relieving, second-level interconnect structure that is low-cost and accommodates TCE mismatch between low-TCE packages and PCBs. The various embodiments of the interconnect structure are reworkable and can be scaled to pitches from about 1 millimeter (mm) to about 150 micrometers (?m). The interconnect structure comprises at least a first pad, a supporting pillar, and a solder bump, wherein the first pad and supporting pillar are operative to absorb substantially all plastic strain, therefore enhancing compliance between the two electronic components. The versatility, scalability, and stress-relieving properties of the interconnect structure of the present invention make it a desirable structure to utilize in current two-dimensional and ever-evolving three-dimensional IC structures.Type: ApplicationFiled: September 20, 2011Publication date: October 17, 2013Applicant: Georgia Tech Research CorporationInventors: Pulugurtha Markondeya Raj, Nitesh Kumbhat, Venky Sundaraman, Rao R. Tummala, Xian Qin
-
Publication number: 20130270534Abstract: A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm.Type: ApplicationFiled: October 5, 2011Publication date: October 17, 2013Applicant: GEORGIA TECH RESEARCH CORPORATIONInventors: Do Kyung Hwang, Jungbae Kim, Canek Fuentes-Hernandez, Bernard Kippelen
-
Patent number: 8558329Abstract: A device includes a substrate having a first surface. A piezoelectric nanowire is disposed on the first surface of the substrate. The piezoelectric nanowire has a first end and an opposite second end. The piezoelectric nanowire is subjected to an amount of strain. A first Schottky contact is in electrical communication with the first end of the piezoelectric nanowire. A second Schottky contact is in electrical communication with the second end of the piezoelectric nanowire. A bias voltage source is configured to impart a bias voltage between the first Schottky contact and the second Schottky contact. A mechanism is configured to measure current flowing through the piezoelectric nanowire. The amount of strain is selected so that a predetermined current will flow through the piezoelectric nanowire when light of a selected intensity is applied to a first location on the piezoelectric nanowire.Type: GrantFiled: November 12, 2010Date of Patent: October 15, 2013Assignee: Georgia Tech Research CorporationInventors: Zhong L. Wang, Youfan Hu, Yan Zhang
-
Patent number: 8559544Abstract: Disclosed herein are lattice reduction systems and methods for a MIMO communication system. One such method includes providing a channel matrix corresponding to a channel in a MIMO communication system, preprocessing the channel matrix to form at least an upper triangular matrix, implementing a relaxed size reduction process, and implementing a basis update process. Implementing the relaxed size reduction process comprises choosing a first relaxed size reduction parameter for a first-off-diagonal element of the upper triangular matrix, choosing a second relaxed size reduction parameter, which is greater than the first relaxed size reduction parameter, for a second-off-diagonal element of the upper triangular matrix evaluating whether a first relaxed size reduction condition is satisfied for the first-off-diagonal element of the upper triangular matrix, and evaluating whether a second relaxed size reduction condition is satisfied for the second-off-diagonal element of the upper triangular matrix.Type: GrantFiled: November 10, 2010Date of Patent: October 15, 2013Assignee: Georgia Tech Research CorporationInventors: David Verl Anderson, Brian Joseph Gestner, Wei Zhang, Xiaoli Ma
-
Patent number: 8546930Abstract: Three dimensional integrated circuits with double sided power, coolant, and data features and methods of constructing same are provided. According to some embodiments, an integrated circuit package can generally comprise one or more semiconductor wafers and opposing end substrates. The semiconductor wafers can each have a top exterior surface and a bottom exterior surface. The plurality of semiconductor wafers can form a multi-dimensional wafer stack of die wafers such that adjacent wafers have facing surfaces. Each of the semiconductor wafers can comprise one or more channels formed through the wafers. A portion of the channels can extend generally between the top and bottom exterior surfaces of the semiconductor wafers. A portion of the channels can carry conductors for coupling the wafers and/or coolant for cooling the wafers. The opposing end substrates can be disposed proximate opposing ends of the multi-dimensional stack.Type: GrantFiled: January 26, 2010Date of Patent: October 1, 2013Assignee: Georgia Tech Research CorporationInventors: Muhannad S. Bakir, Gang Huang
-
Patent number: 8546505Abstract: This invention relates generally to norbornene-monomer, poly(norbornene)homopolymer, and poly(norbornene)copolymer compounds containing a functionalized carbazole side chain, having desirable solution processability and host characteristics. It also relates to hole transport and/or electron blocking materials, and to organic host materials for an organic luminescence layer, an OLED device, and compositions of matter which include these compounds.Type: GrantFiled: December 19, 2008Date of Patent: October 1, 2013Assignee: Georgia Tech Research CorporationInventors: Yadong Zhang, Seth Marder, Carlos Zuniga, Stephen Barlow, Bernard Kippelen, Andreas Haldi, Benoit Domerq, Marcus Weck, Alpay Kimyonok
-
Patent number: 8545606Abstract: The present invention relates to a method for treating molecular sieve particles for use in a mixed matrix membrane useful in, for example, gas separations. Membranes employing treated molecular sieve particles may exhibit enhanced permeabilities and selectivities in regard to, for example, the separation of carbon dioxide and methane.Type: GrantFiled: August 20, 2010Date of Patent: October 1, 2013Assignee: Georgia Tech Research CorporationInventors: William John Koros, Jason Keith Ward
-
Publication number: 20130254149Abstract: An affective model device and a method of deciding the behavior of an affective model device are provided. The affective model device has affective components representing trait, attitude, mood, emotion, and the like. The affective model device updates the emotion at regular time intervals or when a stimulus is received, and decides the behavior based on the updated emotion. The emotion may be updated depending on trait, attitude, and mood.Type: ApplicationFiled: May 17, 2013Publication date: September 26, 2013Applicants: Georgia Tech Research Corporation, Samsung Electronics Co., Ltd.Inventors: Hyun-Ryong JUNG, Jamee Kim LEE, Lilia MOSHKINA, Ronald ARKIN, Sunghyun PARK, Chien-Ming HUANG
-
Publication number: 20130252307Abstract: The invention provides a method for increasing the stability and/or activity of a polypeptide at low pH and/or elevated temperatures. The invention further provides a method for increasing the melting temperature of a polypeptide. Also provided are paleoenzymologically reconstructed thioredoxin polypeptides having activity at higher temperatures and/or lower pH than extant thioredoxin polypepetides, as well as paleoenzymologically reconstructed thioredoxin polypeptides having higher melting temperatures than extant thioredoxin polypepetides.Type: ApplicationFiled: July 15, 2011Publication date: September 26, 2013Applicant: GEORGIA TECH RESEARCH CORPORATIONInventors: Julio M. Fernandez, Raul Perez-Jimenez, Eric Gaucher, Pallav Kosuri
-
Patent number: 8542618Abstract: Devices, systems, and methods of improving protocol performance are disclosed. One method includes transmitting a block of frames to another communication device, and upon completion of the transmitting, requesting an acknowledgement of the transmitted block from the another communication device. The method further includes receiving the acknowledgement and adjusting the number of frames in the block based on information from the received acknowledgement.Type: GrantFiled: November 14, 2007Date of Patent: September 24, 2013Assignee: Georgia Tech Research CorporationInventors: Raghupathy Sivakumar, Yeonsik Jeong, Sandeep Kakumanu, Cheng-Lin Tsao
-
Publication number: 20130245137Abstract: Catalyst compositions comprising molybdenum, sulfur and an alkali metal ion supported on a nanofibrous, mesoporous carbon molecular sieve are useful for converting syngas to higher alcohols. The compositions are produced via impregnation and may enhance selectivity to ethanol in particular.Type: ApplicationFiled: December 1, 2011Publication date: September 19, 2013Applicant: Georgia Tech Research CorporationInventors: Christopher W. Jones, Pradeep K. Agrawal, Tien Thao Nguyen
-
Publication number: 20130243876Abstract: The present invention provides a method of treating an ovarian cancer, the method comprising delivering one or more miR-200 family members to a mammalian subject in need thereof in an amount effective to treat the ovarian cancer. Also provided are methods of preventing metastasis of an ovarian cancer, the method comprising delivering one or more miR-200 family members to a mammalian subject in need thereof in an amount effective to prevent metastasis. Further provided are methods of sensitizing an ovarian cancer to a cytotoxic therapy, the method comprising delivering one or more miR-200 family members to a mammalian subject in need thereof in an amount effective to sensitize the ovarian cancer to the cytotoxic therapy. The invention also contemplates methods of reducing epithelial-to-mesenchymal transition (EMT) in an ovarian cancer or cancer cell as well as methods of inducing mesenchymal-to-epithelial transition (MET).Type: ApplicationFiled: November 23, 2011Publication date: September 19, 2013Applicant: Georgia Tech Research CorporationInventors: John McDonald, Nathan John Bowen, LiJuan Wang
-
Publication number: 20130244408Abstract: Systems and methods for MBE growing of group-III Nitride alloys, comprising establishing an average reaction temperature range from about 250 C to about 850 C; introducing a nitrogen flux at a nitrogen flow rate; introducing a first metal flux at a first metal flow rate; and periodically stopping and restarting the first metal flux according to a first flow duty cycle. According to another embodiment, the system comprises a nitrogen source that provides nitrogen at a nitrogen flow rate, and, a first metal source comprising a first metal effusion cell that provides a first metal at a first metal flow rate, and a first metal shutter that periodically opens and closes according to a first flow duty cycle to abate and recommence the flow of the first metal from the first metal source. Produced alloys include AlN, InN, GaN, InGaN, and AlInGaN.Type: ApplicationFiled: November 8, 2011Publication date: September 19, 2013Applicant: GEORGIA TECH RESEARCH CORPORATIONInventors: Michael William Moseley, William Alan Doolittle
-
Publication number: 20130245328Abstract: Catalyst compositions for production of higher alcohols comprise a hydrotalcite or hydrotalcite-like support impregnated with molybdenum and an alkali metal. When the compositions are used to convert syngas, selectivity to higher (C2+) alcohols is increased in comparison to conversions accomplished over many other catalyst systems.Type: ApplicationFiled: December 1, 2011Publication date: September 19, 2013Applicant: Georgia Tech Research CorporationInventors: Christopher W. Jones, Pradeep K. Agrawal, Tien Thao Nguyen