Abstract: A process for depositing silicon carbide layers to produce highly pure silicon carbide having a stoichiometric composition and a theoretical density includes feeding a gas mixture to a heated substrate under specified conditions, separating the decomposition products into gas and liquid phases by condensation, rectifying the liquid phase and recycling recovered materials, cooling the gas phase and recovering a solid deposit, and compressing and recycling hydrogen.
Type:
Grant
Filed:
July 13, 1995
Date of Patent:
December 16, 1997
Assignees:
Aktsionernoe Obschestvo Russkoe Obschestvo Prikladnoi Elektroniki, Vladimir Vasilievich Mitin, Georgy Evgenievich Chernikov, Leonard Stepanovich Ivanov
Inventors:
Leonard Stepanovich Ivanov, Georgy Evgenievich Chernikov, Alexandr Vyacheslavovich Eljutin