Patents Assigned to Georgy Evgenievich Chernikov
  • Patent number: 5698261
    Abstract: A process for depositing silicon carbide layers to produce highly pure silicon carbide having a stoichiometric composition and a theoretical density includes feeding a gas mixture to a heated substrate under specified conditions, separating the decomposition products into gas and liquid phases by condensation, rectifying the liquid phase and recycling recovered materials, cooling the gas phase and recovering a solid deposit, and compressing and recycling hydrogen.
    Type: Grant
    Filed: July 13, 1995
    Date of Patent: December 16, 1997
    Assignees: Aktsionernoe Obschestvo Russkoe Obschestvo Prikladnoi Elektroniki, Vladimir Vasilievich Mitin, Georgy Evgenievich Chernikov, Leonard Stepanovich Ivanov
    Inventors: Leonard Stepanovich Ivanov, Georgy Evgenievich Chernikov, Alexandr Vyacheslavovich Eljutin