Abstract: In a semiconductor element having a semiconductor body, an electrode structure is arranged on at least one major surface of the element for storing charge carriers of at least one conductivity in cells formed by the electrode structure. Control electrodes which are at least partially enclosed in the semiconductor body are arranged in at least one plane essentially parallel to the major surface of the semiconductor body. The control electrodes similarly enable charge carriers to be stored in defined cells. The control electrodes stored also make it possible to shift stored charges from one cell to another, whereby at least two independent charge images can be stored in a three-dimensionally arranged storage cell pattern.

Abstract: A semiconductor radiation detector has an at least partially or even completely depleted base region of a first conductivity, to which a bias voltage is applied, and has at least one output or read-out electrode at which a signal is produced by the charge carriers generated by radiation incident on the detector. The read-out or output electrode includes a highly doped region of the first or a second conductivity, onto which an insulating layer and thereupon a conducting electrode layer are applied for outputting the generated or induced signals. The voltage application to the highly doped region of the read-out or output electrode is achieved through a high impedance through the base region of the detector, from at least one electrode of the same conductivity as that of the output or read-out electrode. Thus, it is simply possible to capacitively couple the detector to external circuitry even if these external circuits have a complex structure or arrangement.