Patents Assigned to G. I. Corporation
  • Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material
    Patent number: 5298457
    Abstract: The all epitaxial process starts with a high resistivity silicon substrate. Alternating layers of silicon and silicon-germanium are epitaxially grown on the substrate under conditions which create a region with misfit dislocations. A low resistivity silicon layer is then grown over the region. The material is inverted such that the high resistivity layer can be used to form the base of the device. The thickness of the high resistivity layer is adjusted to equal the width of the base of the semiconductor device to be fabricated.
    Type: Grant
    Filed: July 1, 1993
    Date of Patent: March 29, 1994
    Assignee: G. I. Corporation
    Inventors: William G. Einthoven, Joseph Y. Chan, Dennis Garbis