Abstract: Correlated double sampling column-level readout of an image sensor pixel may be provided by a charge transfer amplifier that is configured and operated to itself provide for both correlated-double-sampling and amplification of floating diffusion potentials read out from the pixel onto a column bus after reset of the floating diffusion (I) but before transferring photocharge to the floating diffusion (the reset potential) and (ii) after transferring photocharge to the floating diffusion (the transfer potential). A common capacitor of the charge transfer amplifier may sample both the reset potential and the transfer potential such that a change in potential (and corresponding charge change) on the capacitor represents the difference between the transfer potential and reset potential, and the magnitude of this change is amplified by the charge change being transferred between the common capacitor and a second capacitor selectively coupled to the common capacitor.

Abstract: According to some embodiments, an image sensor pixel includes a floating diffusion, a transistor gate configured to transfer charge with respect to the floating diffusion, and a doped pinning region disposed between the floating diffusion and the transistor gate, to reduce or eliminate the effective capacitive coupling between the floating diffusion and the transistor gate. The transistor gate may be an in-pixel transfer gate configured to selectively transfer photocharge from an in-pixel charge accumulation region to the floating diffusion. Alternatively, or additionally, the transistor gate may be an in-pixel reset gate configured to selectively reset the electrostatic potential of the floating diffusion.