Abstract: A solution and method of creating such for producing silicon nanowires or silicon nano-plates. The solution comprising distilled water, Potassium Hydroxide (KOH), at least one catalyst, Sodium Methyl Siliconate (CH5NaO3Si), Ethylenediaminetetraacetic Acid (EDTA), which act as a first chelating agent, Sodium Diethyldithiocarbamate (C5H10NS2Na), which acts as a second chelating agent, and Dimethylacrylic Acid, which acts as a buffer that is able to regulate the amount of silicon nanowires or plates formed and to prevent agglomeration. The concentration of the Sodium Diethyldithiocarbamate in the solution is greater than concentration of the EDTA in the solution for forming a plurality of thick and short nanowires, and the concentration of the Sodium Diethyldithiocarbamate in the solution is less than the concentration of the EDTA in the solution for forming a plurality of thin and long nanowires.