Patents Assigned to GLBOALFOUNDRIES INC.
  • SELF-ALIGNED CONTACTS FOR VERTICAL FIELD EFFECT TRANSISTOR CELL HEIGHT SCALING
    Publication number: 20190088764
    Abstract: A vertical FinFET includes a semiconductor fin formed over a semiconductor substrate. A self-aligned first source/drain contact is electrically separated from a second source/drain contact by a spacer layer that is formed over an endwall of the fin. The spacer layer, which comprises a dielectric material, allows the self-aligned first source/drain contact to be located in close proximity to an endwall of the fin and the associated second source/drain contact without risk of an electrical short between the adjacent contacts.
    Type: Application
    Filed: September 15, 2017
    Publication date: March 21, 2019
    Applicant: GLBOALFOUNDRIES INC.
    Inventors: Ruilong XIE, Steven BENTLEY, Puneet Harischandra SUVARNA, Chanro PARK, Min Gyu SUNG, Lars LIEBMANN, Su Chen FAN, Brent ANDERSON