Abstract: An integrated circuit (IC) microdisplay structure is disclosed. The structure can include: a first oxide layer positioned on a substrate; a first voltage source (VSS) pad within the first oxide layer; a metal pillar disposed within the first oxide layer and on the first VSS pad; a first gallium nitride layer disposed on the metal pillar and extending over the first oxide layer; and at least one subpixel formed from the first gallium nitride layer. Alternatively, the structure can include a first oxide layer positioned on a substrate; a first metal layer positioned on the first oxide layer; a first gallium nitride layer on the first metal layer; and at least one subpixel formed from the first gallium nitride layer. The structure may further include a subpixel driver electrically connected to the at least one subpixels where a portion of the subpixel driver is vertically aligned with a subpixel.