Abstract: A methodology enabling the formation of steep channel profiles for devices, such as SSRW FETs, having a resultant channel profiles that enables suppression of threshold voltage variation and the resulting device are disclosed. Embodiments include providing STI regions in a silicon wafer; performing a deep well implantation of a dopant into the silicon wafer between STI regions; forming a recess in the doped silicon wafer between the STI regions; performing a shallow well implantation of the dopant into the silicon wafer in the recess; and forming Si:C on the doped silicon wafer in the recess.

Abstract: In one embodiment, an integrated circuit comprises first circuitry; a first clock generator coupled to supply a first clock to the first circuitry, and a control unit coupled to the first clock generator. The first clock generator is coupled to receive an input clock to the integrated circuit and is configured to generate the first clock. The control unit is also coupled to receive a trigger input to the integrated circuit. During a test of the integrated circuit, the control unit is configured to cause the first clock generator to generate the first clock at a first clock frequency, The control unit is configured to cause the first clock generator to generate the first clock at a second frequency greater than the first clock frequency for at least one clock cycle responsive to an assertion of the trigger input.