Abstract: In one embodiment, a tape drive includes a drive buffer, a processor, and logic integrated with and/or executable by the processor, the logic being configured to cause the processor to: receive a list including: user data segments recorded on tape media, wherein the user data segments are arranged in the list according to a predetermined order, and information associated with each user data segment, wherein the information includes a description of a physical location of each of the user data segments on the tape media. The logic is further configured to cause the processor to locate each of the user data segments on the tape media according to the order in the list, read each of the user data segments from the tape media according to the order in the list, and write each of the user data segments to a buffer according to the order in the list.

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.