Abstract: A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm; a Group IVA nitride layer in contact with the semiconductor handle substrate, the Group IVA nitride layer selected from the group consisting of carbon nitride, silicon carbon nitride, and a combination thereof; a dielectric layer in contact with the Group IVA nitride layer; and a semiconductor device layer in contact with the dielectric layer.
Abstract: A method of preparing a single crystal semiconductor handle wafer in the manufacture of a semiconductor-on-insulator device is provided. The single crystal semiconductor handle wafer is prepared to comprise a charge trapping layer, which is oxidized. The buried oxide layer in the resulting semiconductor-on-insulator device comprises an oxidized portion of the charge trapping layer and an oxidized portion of the single crystal semiconductor device layer.
Type:
Grant
Filed:
November 13, 2015
Date of Patent:
August 13, 2019
Assignee:
GlobalWafers Co., Inc.
Inventors:
Igor Peidous, Jeffrey L. Libbert, Srikanth Kommu, Andrew M. Jones, Samuel Christopher Pratt, Horacio Josue Mendez, Leslie George Stanton, Michelle Rene Dickinson