Patents Assigned to GlogalFoundries, Inc.
  • Replacement gate multigate transistor for embedded DRAM
    Patent number: 9368502
    Abstract: A memory cell, an array of memory cells, and a method for fabricating a memory cell with multigate transistors such as fully depleted finFET or nano-wire transistors in embedded DRAM. The memory cell includes a trench capacitor, a non-planar transistor, and a self-aligned silicide interconnect electrically coupling the trench capacitor to the non-planar transistor.
    Type: Grant
    Filed: October 17, 2011
    Date of Patent: June 14, 2016
    Assignee: GlogalFoundries, Inc.
    Inventors: Josephine B. Chang, Leland Chang, Michael A. Guillorn, Wilfried E. Haensch