Abstract: A method for processing a substrate, the substrate comprising an organic film pattern, the method comprising: a fusion/deformation step of fusing said organic film pattern to deform the fused organic film pattern and a third removal step of removing at least a part of the fused and deformed organic film pattern.

Abstract: Text input mode selection method is implemented in a device with a plurality of keys. If an input mode switching key is activated by a first operation matching a first input pattern, options of the key is provided in a default arrangement. If the key is activated by a second operation matching a second input pattern, options of the key is provided in an altered arrangement. Activation of the key according to a selected option activates one of a plurality of character input methods associated with the selected option. Each of the character input methods is associated with a virtual keyboard layout.

Abstract: A data signal voltage on a signal line 102 is held in a voltage holding capacitor 106 through an n-type MOS transistor 103 switched on by a gate scan voltage, and supplied to an analog amplifier circuit 104-1. The analog amplifier circuit 104-1 is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal 109, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal 109.

Abstract: A data signal voltage on a signal line is held in a voltage holding capacitor through an n-type MOS transistor switched on by a gate scan voltage, and supplied to an analog amplifier circuit. The analog amplifier circuit is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal.

Abstract: A hold type image display system for displaying a video on a display panel includes a source driver for outputting a video signal to a source line, a gate driver for outputting a scanning signal to a gate line; and a controller for receiving an input video signal and thereby controlling the source driver and the gate driver. The controller outputs a video signal in which a black or gray line is inserted between video lines to the source driver, outputs a start pulse signal for writing the video lines for one or more times and a start pulse signal for writing black or gray lines for one or more times to the gate driver within one frame period, and independently inverts a write polarity of the video signal and a write polarity of the black or gray signal in frame periods in each frame cycle.

Abstract: An image retrieval method applies an application server, one or more calculating servers, and a sorting server to perform image retrieval. The application server extracts visual features of an exemplary image. The one or more calculating servers calculate similarities of available images according to the visual features of the exemplary image. The sorting server sorts the available images according to the similarities so as to obtain images similar to the exemplary image.

Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

Abstract: A liquid crystal display substrate has a data driver circuit and a gate driver circuit for driving the liquid crystal display integrated thereon together with a common drive circuit, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit is placed to be adjacent to the terminal opposite to where the gate driver circuit is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit. The pad close to where the common drive circuit is placed is used as the pad for applying the common voltages VCOMH and VCOML.

Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

Abstract: A text input method is implemented in a device with a plurality of keys. If a first key is activated by a first touch operation, one character in a first character set associated with the first key is selected as a first character. If a second key is activated by a second touch operation one character in a second character set associated with the second key is selected as a last character. Each of the first and second touch operations includes a press, a touch track, or a combination of a press and a touch track on a key. An auto-completed word is generated based on a database of words in response to the second touch operation. The auto-completed word includes the first character as a leftmost character of the auto-completed word and the last character as a rightmost character of the auto-completed word.

Abstract: A character input method is implemented in a device with a plurality of keys. If a key is activated by a first operation matching a first input pattern, a first route is selected to traverse a plurality of characters corresponded by the key during presentation of the plurality of characters. If the first key is activated by a second operation matching a second input pattern, the plurality of characters corresponded by the first key are orderly retrieved and presented according to a second route in response to operations on the first key. The order for presenting two characters corresponded by the first key in the first route is reversed in the second route.

Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

Abstract: A data signal voltage on a signal line is held in a voltage holding capacitor through an n-type MOS transistor switched on by a gate scan voltage, and supplied to an analog amplifier circuit. The analog amplifier circuit is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal.

Abstract: A data signal voltage on a signal line 102 is held in a voltage holding capacitor 106 through an n-type MOS transistor 103 switched on by a gate scan voltage, and supplied to an analog amplifier circuit 104-1. The analog amplifier circuit 104-1 is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal 109, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal 109.

Abstract: A device excellent in electrical characteristics is provided by suppressing an operation failure owing to a hysteresis effect that occurs in a circuit using MOS transistors having floating bodies. Moreover, sensitivity of a sense amplifier circuit and a latch circuit including these MOS transistors as components is improved. A signal required in a circuit other than a first circuit is outputted by using electrical characteristics of MOS transistors in a first period (effective period), and in a second period (idle period) excluding the first period, between the gate and source of MOS transistors, a step waveform voltage not less than threshold voltages of these MOS transistors is given.

Abstract: A method of processing a substrate through the use of an apparatus, including a substrate carrier for carrying a substrate; a liquid-applying unit for applying chemical to said substrate; and a gas-applying unit for applying gas atmosphere generated by vaporizing the liquid to said substrate. And the apparatus includes a plurality of process units, and the same process is applied to the substrate in each said process units.

Abstract: A hold type image display system for displaying a video on a display panel includes a source driver for outputting a video signal to a source line, a gate driver for outputting a scanning signal to a gate line; and a controller for receiving an input video signal and thereby controlling the source driver and the gate driver. The controller outputs a video signal in which a black or gray line is inserted between video lines to the source driver, outputs a start pulse signal for writing the video lines for one or more times and a start pulse signal for writing black or gray lines for one or more times to the gate driver within one frame period, and independently inverts a write polarity of the video signal and a write polarity of the black or gray signal in frame periods in each frame cycle.

Abstract: A liquid crystal display panel has a pair of opposed substrates, a seal material and a liquid crystal material. The seal material bonds the pair of substrates to each other, and is formed into a closed curve shape enclosing a region including a pixel region. The liquid crystal material is filled in a region enclosed by the pair of substrates and the seal material. A surface of interface which is a surface made up of at least one substrate of the pair of substrates, and which is in contact with the liquid crystal material in a frame region enclosed by an outer periphery of the pixel region and an inner periphery of the seal material, includes a low wettability structure in which wettability to the liquid crystal material is lower than that of the surface of the one substrate in the pixel region.

Abstract: A data signal voltage on a signal line 102 is held in a voltage holding capacitor 106 through an n-type MOS transistor 103 switched on by a gate scan voltage, and supplied to an analog amplifier circuit 104-1. The analog amplifier circuit 104-1 is formed of an MOS transistor having a double gate structure, and the operating point thereof is set at an operating range in which dependence of Ids on Vds is substantially nullified. Even when Vds is varied due to a response of liquid crystal 109, Ids is substantially fixed. Accordingly, the pixel voltage which is substantially proportional to the data signal voltage can be applied to the liquid crystal 109.

Abstract: A color filter having two-layered light-shielding sections without a black matrix is provided, which reduces the level difference from the colored materials for pixels with a simple method and makes it possible to remove the color layer on the said sections. A red color layer having stripe-shaped red pixel formation sections and a blue color layer having stripe-shaped blue pixel formation sections are overlapped to form two-layered light-shielding sections. A green color layer having island-shaped green pixel formation sections is overlapped with the red and blue color layers, placing the green pixel formation sections in the overlapped green pixel windows of the red and blue color layers. Only the peripheries of the green pixel formation sections are placed on the light-shielding sections to facilitate the removal of the peripheries by polishing.