Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.

Abstract: Disclosed are benztropinamine analogs having the formula I (I) in which E is NR1, S, or CH2; B is NR4, O, or CH2; m=1 to 5; n=1 to 3; Ar is a C5-C20 monocyclic aryl group or a C10-C20 bicyclic aryl group or a heteroaryl group having 2 to 6 carbon atoms and one or more heteroatoms selected from the group consisting of N, O, S, and any combination thereof; and bond “a” can be of ?, ?, or ?/? configuration, wherein R1 to R5 are as described in the specification; or a pharmaceutically acceptable salt or solvate thereof; pharmaceutical compositions and use thereof, e.g., in treating mental disorders.