Abstract: A sense amplifier for Mask Read Only Memory comprising a multiplexer, a plurality of comparators, a plurality of first selected transistors, and a plurality of second selected transistors. The gates of both first selected transistor and second selected transistor are connected to a word line select. One doping area of the first selected transistor is connected to the multiplexer for generating a plurality of signals, and another doping area is connected to a selected bit line. One doping area of each of the second selected transistor is connected to each of the comparators, and another doping area is connected to an external voltage. A cell voltage status is determined when each of the signals and one of doping areas of the second selected transistors are connected to each of the comparators.