Abstract: The present invention overcomes the limitations of Siemens reactors by providing for the deposition reaction to occur inside of a sealed crucible rather than inside of the overall cavity of a water-cooled reactor. The crucible itself is positioned inside of a cartridge reactor, which can have heat shields between crucible and the reactor walls to significantly reduce radiant energy losses. Additionally, the ratio of deposition surface area to cavity volume in the crucible is much higher than that in the ratio of rod deposition surface area to overall cavity volume in Siemens reactors, which results in a much higher contact percentage of gas molecules with the deposition surfaces. This in turn results in a much higher actual conversion ratio of material in the gas to material on the deposition surfaces.

Abstract: An electrically heated deposition cartridge for use in the production of materials via the chemical vapor deposition process that has (i) a higher ratio of surface area to volume than a seed rod pair, (ii) a higher ratio of starting effective deposition surface area to final effective deposition surface area than a seed rod pair, and (iii) a higher ratio of effective deposition surface area to gross surface area than a basic deposition plate, which are achieved by reaching and maintaining the desired temperatures on all desired surfaces of the deposition cartridge, which in turn is achieved by distribution of the desired amount of current through all desired cross-sectional areas of the deposition cartridge.