Abstract: A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres.

Abstract: A light emitting device structure, wherein the emitter layer structure comprises one or more device wells defined by thick field oxide regions, and a method of fabrication thereof are provided. Preferably, by defining device well regions after depositing the emitter layer structure, emitter layer structures with reduced topography may be provided, facilitating processing and improving layer to layer uniformity. The method is particularly applicable to multilayer emitter layer structures, e.g. comprising a layer stack of active layer/drift layer pairs. Preferably, active layers comprise a rare earth oxide, or rare earth doped dielectric such as silicon dioxide, silicon nitride, or silicon oxynitride, and respective drift layers comprise a suitable dielectric, preferably silicon dioxide, of an appropriate thickness to control excitation energy. Pixellated light emitting structures, or large area, high brightness emitter layer structures, e.g.

Abstract: A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.

Abstract: The present invention replaces conventional lighting devices, such as incandescent lamps, fluorescent lamps, and LED lamps, with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing a full range of color adjustment. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: The present invention replaces the conventional cold cathode fluorescent tubes used in backlighting units of liquid crystal displays with an integrated electro-luminescent film structure, subdivided into electrically isolated micro-panels. Ideally, the electro-luminescent structure comprises separate red, green and blue micro-panels providing full color capabilities. Alternatively, the electro-luminescent film structure includes stacked groups of layers, in which each group emits a different color and is independently controllable.

Abstract: A light emitting device includes an active layer structure, which has one or more active layers with luminescent centers, e.g. a wide bandgap material with semiconductor nano-particles, deposited on a substrate. For the practical extraction of light from the active layer structure, a transparent electrode is disposed over the active layer structure and a base electrode is placed under the substrate. Transition layers, having a higher conductivity than a top layer of the active layer structure, are formed at contact regions between the upper transparent electrode and the active layer structure, and between the active layer structure and the substrate. Accordingly the high field regions associated with the active layer structure are moved back and away from contact regions, thereby reducing the electric field necessary to generate a desired current to flow between the transparent electrode, the active layer structure and the substrate, and reducing associated deleterious effects of larger electric fields.

Abstract: A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device. A series of rare-earth doped silicon and/or silicon carbide nanocrystals that are either combined in a single layer or in individual layers that produce the required Red, Green, and Blue (RGB) emission to form a white light.

Abstract: The invention provides a doped semiconductor powder comprising nanocrystals of a group IV semiconductor and a rare earth element, the rare earth element being dispersed on the surface of the group IV semiconductor nanocrystals. The invention also provides processes for the preparation of the above doped semiconductor powder, and a composite material comprising a matrix in which is dispersed a doped semiconductor powder.

Abstract: Group IV semiconductor nanocrystal doped with rare earths or other light emitting metal to form alternating current solid-state devices that can be designed to operate at a variety of voltages including line voltages. The semiconductor nanocrystals are preferably silicon, silicon carbide, germanium or germanium carbide, and the electric luminescent device may have an upper and lower thin coat of a semiconductor nanocrystal glass material in turn connected to alternating current electrodes. The present invention enables one to fabricate a solid-state light that can use standard fixtures, e.g. Edison type, and standard AC voltages and frequencies for use in houses and businesses without refurbishing the installed lighting fixtures.