Patents Assigned to Group4 Labs, Inc.
  • Semiconductor devices having gallium nitride epilayers on diamond substrates
    Patent number: 8283672
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: June 12, 2009
    Date of Patent: October 9, 2012
    Assignee: Group4 Labs, Inc.
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic
  • Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates
    Patent number: 8283189
    Abstract: Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
    Type: Grant
    Filed: September 29, 2009
    Date of Patent: October 9, 2012
    Assignee: Group4 Labs, Inc.
    Inventors: Daniel Francis, Felix Ejeckam, John Wasserbauer, Dubravko Babic