Abstract: A method is provided for characterizing spectrometric properties (e.g., peak reflectivity, reflection curve width, and Bragg angle offset) of the K? emission line reflected narrowly off angle of the direct reflection of a bent crystal and in particular of a spherically bent quartz 200 crystal by analyzing the off-angle x-ray emission from a stronger emission line reflected at angles far from normal incidence. The bent quartz crystal can therefore accurately image argon K? x-rays at near-normal incidence (Bragg angle of approximately 81 degrees). The method is useful for in-situ calibration of instruments employing the crystal as a grating by first operating the crystal as a high throughput focusing monochromator on the Rowland circle at angles far from normal incidence (Bragg angle approximately 68 degrees) to make a reflection curve with the He-like x-rays such as the He-? emission line observed from a laser-excited plasma.
Type:
Grant
Filed:
October 26, 2012
Date of Patent:
April 7, 2015
Assignees:
Lawrence Livermore National Security, LLC, University of California, GSI
Inventors:
Nathan Kugland, Tilo Doeppner, Siegfried Glenzer, Carmen Constantin, Chris Niemann, Paul Neumayer