Patents Assigned to GSI Lumonics Corporation
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Patent number: 7666759Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measurement cuts, using non-sequential collinear cutting, using spot fan-out parallel cutting, and using a retrograde scanning technique for faster collinear cuts. Non-sequential cutting is also used to manage thermal effects and calibrated cuts are used for improved accuracy. Test voltage is controlled to avoid resistor damage.Type: GrantFiled: May 2, 2006Date of Patent: February 23, 2010Assignee: GSI Lumonics CorporationInventors: Bruce L. Couch, Jonathan S. Ehrmann, Joseph V. Lento, Shepard D. Johnson
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Publication number: 20080316504Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.Type: ApplicationFiled: October 9, 2006Publication date: December 25, 2008Applicant: GSI Lumonics CorporationInventors: Chris Nemets, Michael Woelki
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Patent number: 7382389Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: GrantFiled: November 7, 2006Date of Patent: June 3, 2008Assignee: GSI Lumonics CorporationInventors: James J. Cordingley, Jonathan S. Ehrmann, David M. Filgas, Shepard D. Johnson, Joohan Lee, Donald V. Smart, Donald J. Svetkoff
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Publication number: 20070075058Abstract: A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.Type: ApplicationFiled: December 1, 2006Publication date: April 5, 2007Applicant: GSI Lumonics CorporationInventors: Jonathan Ehrmann, James Cordingley, Donald Smart, Donald Svetkoff
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Publication number: 20070052791Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: ApplicationFiled: November 7, 2006Publication date: March 8, 2007Applicant: GSI Lumonics CorporationInventors: James Cordingley, Jonathan Ehrmann, David Filgas, Shepard Johnson, Joohan Lee, Donald Smart, Donald Svetkoff
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Publication number: 20070031993Abstract: A precision laser based method of marking semiconductor wafers, packages, substrates or similar workpieces is provided. The workpieces have articles which may include die, chip scale packages, circuit patterns and the like. The marking occurs in a workpiece marking system and within a designated region relative to an article position. The method includes determining at least one location from which reference data is to be obtained using (a) information from which a location of an article is defined, and (b) a vision model of at least a portion of at least one article. Reference data is obtained to locate a feature on a first side of (a second) workpiece using at least one signal from a first sensor. The method further includes positioning a marking field relative to the workpiece so as to position a laser beam at a marking location on a second side of the workpiece. The positioning is based on the feature location.Type: ApplicationFiled: October 9, 2006Publication date: February 8, 2007Applicant: GSI Lumonics CorporationInventors: Chris Nemets, Michael Woelki, Michael Pukmel
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Publication number: 20060216927Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: ApplicationFiled: May 26, 2006Publication date: September 28, 2006Applicant: GSI Lumonics CorporationInventors: James Cordingley, Jonathan Ehrmann, Joseph Griffiths, Joohan Lee, Donald Smart, Donald Svetkoff
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Publication number: 20060207975Abstract: A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.Type: ApplicationFiled: May 2, 2006Publication date: September 21, 2006Applicant: GSI Lumonics CorporationInventors: Jonathan Ehrmann, James Cordingley, Donald Smart, Donald Svetkoff
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Publication number: 20060205121Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measurement cuts, using non-sequential collinear cutting, using spot fan-out parallel cutting, and using a retrograde scanning technique for faster collinear cuts. Non-sequential cutting is also used to manage thermal effects and calibrated cuts are used for improved accuracy. Test voltage is controlled to avoid resistor damage.Type: ApplicationFiled: May 2, 2006Publication date: September 14, 2006Applicant: GSI Lumonics CorporationInventors: Bruce Couch, Jonathan Ehrmann, Joseph Lento, Shepard Johnson
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Publication number: 20060192845Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: ApplicationFiled: May 2, 2006Publication date: August 31, 2006Applicant: GSI Lumonics CorporationInventors: James Cordingley, Jonathan Ehrmann, Shepard Johnson, Joohan Lee, Donald Smart, Donald Svetkoff
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Publication number: 20060186096Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.Type: ApplicationFiled: April 18, 2006Publication date: August 24, 2006Applicant: GSI Lumonics CorporationInventor: Rainer Schramm
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Publication number: 20060180580Abstract: An improved method of laser marking semiconductor wafers is provided wherein undesirable subsurface damage to a silicon semiconductor wafer is avoided while providing a relative improvement in marking speed for a predetermined spot diameter. A laser pulse of a laser beam has a predetermined wavelength, pulse width, repetition rate, and energy. The method further includes irradiating a semiconductor wafer with the pulsed laser beam over a spot diameter to produce a machine readable mark on the semiconductor wafer. The mark has a mark depth. The pulse width is less than about 50 ns, and the step of irradiating irradiates over the spot diameter to produce a mark having a mark depth substantially less than about 10 microns.Type: ApplicationFiled: April 18, 2006Publication date: August 17, 2006Applicant: GSI Lumonics CorporationInventor: Rainer Schramm
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Publication number: 20060113289Abstract: A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.Type: ApplicationFiled: January 16, 2006Publication date: June 1, 2006Applicant: GSI Lumonics CorporationInventors: Jonathan Ehrmann, James Cordingley, Donald Smart, Donald Svetkoff
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Patent number: 7027155Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: GrantFiled: March 27, 2002Date of Patent: April 11, 2006Assignee: GSI Lumonics CorporationInventors: James J. Cordingley, Joseph J. Griffiths, Donald V. Smart
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Publication number: 20060054608Abstract: A method of calibrating a laser marking system includes calibrating a laser marking system in three dimensions. The step of calibrating includes storing data corresponding to a plurality of heights. A position measurement of a workpiece is obtained to be marked. Stored calibration data is associated with the position measurement. A method and system for calibrating a laser processing or marking system is provided. The method includes: calibrating a laser marker over a marking field; obtaining a position measurement of a workpiece to be marked; associating stored calibration data with the position measurement; relatively positioning a marking beam and the workpiece based on at least the associated calibration data; and calibrating a laser marking system in at least three degrees of freedom. The step of calibrating includes storing data corresponding to a plurality of positions and controllably and relatively positioning a marking beam based on the stored data corresponding to the plurality of positions.Type: ApplicationFiled: November 4, 2005Publication date: March 16, 2006Applicant: GSI Lumonics CorporationInventors: Steven Cahill, Jonathan Ehrmann, You Li, Rainer Schramm, Kurt Pelsue
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Patent number: 7002137Abstract: The disclosed optical encoder includes a scale and a sensor head. The scale includes an optical grating and an optical element. The sensor head includes a light source, a detector array, and an index detector all of which are disposed on a substrate. The scale is disposed opposite the sensor head and is disposed for movement relative to the sensor head. The distance between the scale and the sensor head is selected so that the detector array lies near a talbot imaging plane. The light source emits a diverging beam of light, which is directed towards the scale. Light from the diverging beam of light is diffracted by the grating towards the detector array. Light from the diverging beam of light is diffracted by the optical element towards the index detector. The detector array provides a measurement of the position of the sensor head relative to the scale. The index detector provides a reference measurement of the position of the sensor head relative to the scale.Type: GrantFiled: August 13, 2002Date of Patent: February 21, 2006Assignee: GSI Lumonics CorporationInventors: William G. Thorburn, Norman J. Tobey, Melvin J. J. Teare, Douglas A. Klingbeil, Ralph A. Kelliher
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Patent number: 6979798Abstract: Laser system and method for material processing with ultra fast lasers are provided. One aspect of the invention features the method which removes at least a portion of a target structure such as a memory link while avoiding undesirable damage to adjacent non-target structures. The method includes applying a single ultra short laser pulse to the target structure to remove the target structure with the single pulse.Type: GrantFiled: February 26, 2004Date of Patent: December 27, 2005Assignee: GSI Lumonics CorporationInventors: Bo Gu, Donald J. Svetkoff, Kurt Pelsue
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Patent number: 6972268Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.Type: GrantFiled: March 27, 2002Date of Patent: December 6, 2005Assignee: GSI Lumonics CorporationInventors: Jonathan S. Ehrmann, Joseph J. Griffiths, Donald V. Smart, Donald J. Svetkoff
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Patent number: 6973104Abstract: A pulsed laser system includes a laser pump, a laser rod, a reflector interposed between the laser pump and the laser rod, through which energy from the laser pump enters the laser rod, an output reflector through which energy is emitted from the laser rod, a switch interposed between the laser rod and the output reflector, and a control device. The switch, when closed, causes energy to be stored in the laser rod and, when opened, allows energy to be emitted from the laser rod during an emission period. The control device allows a primary laser pulse emitted from the laser rod during the emission period to impinge on a workpiece and blocks from the workpiece secondary laser emission occurring during the emission period after emission of the primary pulse. The pulsed laser system is operated over a range of repetition rates, so as to cause laser energy to be emitted during a plurality of emission periods at each repetition rate.Type: GrantFiled: December 7, 2004Date of Patent: December 6, 2005Assignee: GSI Lumonics CorporationInventor: Donald V. Smart
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Publication number: 20050233537Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measurement cuts, using non-sequential collinear cutting, using spot fan-out parallel cutting, and using a retrograde scanning technique for faster collinear cuts. Non-sequential cutting is also used to manage thermal effects and calibrated cuts are used for improved accuracy. Test voltage is controlled to avoid resistor damage.Type: ApplicationFiled: May 18, 2005Publication date: October 20, 2005Applicant: GSI Lumonics CorporationInventors: Bruce Couch, Jonathan Ehrmann, Yun Chu, Joseph Lento, Shepard Johnson