Abstract: A crystal growth apparatus is disclosed comprising a crucible, optionally contained within a crucible box, on a crucible support block, wherein the bottom of the crucible, the bottom plate of the crucible box, if used, and/or the crucible support block comprise at least one cavity configured to circulate at least one coolant therein. Also disclosed is a method of preparing a crystalline material using the disclosed crystal growth apparatus as well as the resulting crystalline material, having larger overall grain sizes.

Abstract: A method for preventing molten material breach in a crystal growth apparatus includes providing a chamber of the crystal growth apparatus which is coated with a ceramic material. The chamber can be coated on an interior surface to prevent damage to the chamber itself, which is made of steel, and to prevent steam explosions in the water-cooled chamber. Ceramic blanket layers also can be provided over the coated interior surface of the chamber. As a result, it is possible to produce high quality crystalline products while minimizing the hazards and costs in the event of a spill of molten material.

Abstract: Systems and methods are provided for producing monocrystalline materials such as silicon, the monocrystalline materials being usable in semiconductor and photovoltaic applications. A crucible (50) is received in a furnace (10) for growing a monocrystalline ingot, the crucible (50) initially containing a single seed crystal (20) and feedstock material (90), where the seed crystal (20) is at least partially melted, and the feedstock material (90) is completely melted in the crucible (50), which is followed by a growth and solidification process. Growth of monocrystalline materials such as silicon ingots is achieved by directional solidification, in which heat extraction during growth phases is achieved using insulation (14) that is movable relative to a crucible (50) containing feedstock (90). A heat exchanger (200) also is provided to control heat extraction from the crucible (50) during the growth and solidification process to achieve monocrystalline growth.