Abstract: A dielectric resonator device includes an enclosure having a bottom wall, a pedestal made of quartz seated inside the enclosure on the bottom wall, a dielectric resonator element seated on the pedestal, a bracket made of quartz for holding the dielectric resonator down on the pedestal and a clamping disc and screws for securing the bracket to the bottom wall.

Abstract: A method of making a positive temperature coefficient of resistance (PTCR) device, and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time, and cooled to ambient temperature. The process temperature and time period are selected to be sufficent to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere, which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.

Abstract: A system of dielectric ceramic compositions suitable for various microwave applications. The system comprises a plurality of stoichiometrically-related compositions, each composition having its own particular set of dielectric properties and consisting essentially of a sintered mixture represented by the general formula:BaTi.sub.4-w M.sub.w O.sub.9 --xZn.sub.2 TiO.sub.4 --yBaO--zTa.sub.2 O.sub.5wherein M is at least one type of metal and 0.0.ltoreq.w.ltoreq.about 0.05 and wherein x, y, and z are molar fractions of respective components with values within the following respective ranges: 0.0.ltoreq.x.ltoreq.about 0.45; about 0.01.ltoreq.y.ltoreq.about 0.20; and 0.0.ltoreq.z.ltoreq.about 0.10.

Abstract: A method of making a positive temperature coefficient of resistance (PTCR) device,and the PTCR device itself, where there is provided a ferroelectric semiconductor having a Curie point and a bulk resistance. A layer of electrically conducting material is provided upon the ferroelectric semiconductor. The layer is heated at a process temperature greater than the Curie point of the ferroelectric semiconductor for a period of time. End cooled to ambient temperature. The process temperature and time period are selected to be sufficient to provide an ambient layer resistance greater than the bulk resistance of the ferroelectric semiconductor. The layer may be heated in an oxidizing atmosphere or in a reducing atmosphere which also affects the layer resistance. The ferroelectric semiconductor may be in the form of an oxide ceramic or liquid crystals, and may include barium titanate. The layer may be selected from the group consisting of metal, metal alloys, metal oxides, polymers, and composites thereof.

Abstract: A telephone protector comprises an encapsulated bidirectional voltage sensitive switch having three terminals protruding therefrom, one of the terminals being a grounding terminal. There is an elongated shorting bar substantially orthogonal to the three terminals and a metal fusible pellet in direct physical contact with both the grounding terminal and the shorting bar. There is a spring which impels the shorting bar into contact with the other two terminals when the fusible pellet melts.