Abstract: One embodiment of the present invention provides a method of fabricating a semiconductor device including the steps of forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a mask over a first portion the second semiconductor layer; removing a second portion of the second semiconductor layer not covered by the mask; forming a first electrical connector on the first semiconductor layer; and forming a second electrical connector on the first portion of the second semiconductor layer.
Abstract: One embodiment of the present invention provides a module including a primary substrate defining a base of the module, wherein the primary substrate is provided with a plurality of vias for electrical connection to a photodetector located within an interior portion of the module; a side wall member joined to the primary substrate to form side walls of the module and to define the interior portion of the module; a secondary substrate positioned within the interior portion of the module, the photodetector being mounted on the secondary substrate; an optical fiber guide extending into the interior portion of the module from outside the module, the optical fiber being arranged to receive an optical fiber and to position the optical fiber so that light emerging from the optical fiber impinges upon the photodetector; and a lid joined to the side wall member to enclose the interior portion of the module.
Type:
Grant
Filed:
October 19, 2001
Date of Patent:
September 23, 2003
Assignee:
GTRAN, Inc.
Inventors:
Ram Panicker, Ivair Gontijo, Yet-Zen Liu, Kirit Dharia, Robert Franks, Gary Lee Gutierrez