Abstract: Provided is a secondary battery which is small in size and in which current capacity per unit volume can be increased. The present invention provides a secondary battery including two cell units each including a charging layer between a first electrode layer and a second electrode layer, the two cell units being parallel-connected by juxtaposing and connecting a first electrode layer of one cell unit and a first electrode layer of the other cell unit or a second electrode layer of the one cell unit and a second electrode layer of the other cell unit, and by wire-connecting the second electrode layer of the one cell unit and the second electrode layer of the other cell unit or the first electrode layer of the one cell unit and the first electrode layer of the other cell unit.

Abstract: A secondary battery-mounted circuit chip wherein secondary battery is directly fabricated on opposed surface of formed circuit into an integrated structure of the secondary battery and circuit, and a manufacturing method thereof. Secondary battery-mounted circuit chip is configured such that secondary battery is directly fabricated in region corresponding to circuit into integrated structure of secondary battery and circuit. The chip is secondary battery-mounted circuit chip wherein secondary battery is formed on surface opposing a circuit region fabricated on wafer.

Abstract: Provided is a secondary battery in which a single-layer secondary cell has an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, operation, and positioning. The present invention provides a secondary battery including a folded single-layer secondary cell formed by folding a sheet-shaped single-layer secondary cell, with a storage layer sandwiched between a positive electrode layer and a negative electrode layer, two or more times while alternately reversing the folding direction.

Abstract: Provided is a secondary battery being superior to a conventional secondary battery with respect to volume (energy density) and manufacturing (manufacturing workload). The present invention provides a secondary battery including a sheet-shaped first-electrode-functioning base material having a function as a first electrode and a function as a base material, a front-side storage layer formed on a front side of the first-electrode-functioning base material, a front-side second electrode layer layered on the front-side storage layer, a rear-side storage layer formed on a rear side of the first-electrode-functioning base material, and a rear-side second electrode layer layered on the rear-side storage layer.

Abstract: A secondary cell is provided that enables cost reduction and stable operation with a simple configuration and greatly exceeds the capacity of a lithium-ion cell. In a secondary cell, a conductive first electrode is formed on a substrate. An n-type metal oxide semiconductor layer, a charging layer for charging energy, a p-type metal oxide semiconductor layer, and a second electrode are laminated. The charging layer is filled with an n-type metal oxide semiconductor of fine particles. By a photoexcited structural change phenomenon caused by ultraviolet irradiation, a new energy level is formed in a band gap of the n-type metal oxide semiconductor. An electron is captured at the newly formed energy level, thereby charging energy. The charging layer is charged by connecting a power source between the first electrode and the second electrode. It is also possible to charge energy by light, using a transparent electrode.

Abstract: There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

Abstract: A structure with suppressed thickness and high-density when battery cells of a thin-film-solid secondary battery are stacked. Adjacent battery cells are stacked such that negative electrodes are in contact with each other and positive electrodes are in contact with each other, and arranged such that a taking-out lead electrode smaller than negative or positive electrode surfaces are sandwiched between two negative electrodes in contact with each other or two positive electrodes in contact with each other, and the lead electrodes sandwiched between electrodes of different layers are arranged such that there is no region where all of the lead electrodes simultaneously overlap one another as viewed in a planar arrangement. There are a strip-shaped lead electrode and a linear lead electrode. Further, a conductive sheet forming the electrode is extended to also serve as the taking-out electrode, thereby making it possible to reduce the number of lead electrodes.

Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.

Abstract: A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.

Abstract: Provided is a secondary battery adopting an all-solid-state secondary cell structure with a storage layer sandwiched between a positive electrode layer and a negative electrode layer and which is superior to a conventional secondary battery with respect to at least one of volume, manufacturing, and positioning. The present invention provides a secondary battery including a single-layer secondary cell having a folded structure that a sheet-shaped single-layer secondary cell with a storage layer sandwiched between a positive electrode layer and a negative electrode layer is folded in two or four.

Abstract: A charging/discharging device performs charging and discharging on a plurality of secondary cells concurrently in parallel, without adopting a power source having an extremely high current supply capacity. A plurality of switching units controlled by a switching control unit are interposed respectively between the secondary cells and each of a plurality of charging power lines and discharging power lines. A power unit applies voltages having mutually-different voltage values and the switching control unit controls switching so that the respective secondary cells are connected cyclically in predetermined order to the charging and discharge power lines.

Abstract: A photovoltaic cell is provided that enables cost reduction and stable operation with a simple configuration and enhances conversion efficiency by a new technology of forming an energy level in a band gap. In the photovoltaic cell, a substrate, a conductive first electrode, an electromotive force layer, a p-type semiconductor layer, and a conductive second electrode are laminated, electromotive force is generated by photoexciting the electron in the band gap of the electromotive force layer by light irradiation, the electromotive force layer is filled with an n-type metal oxide semiconductor of fine particles coated by an insulating coat, a new energy level is formed in a band gap by photoexcited structural change caused by ultraviolet irradiation, and efficient and stable operation can be performed by providing a layer of an n-type metal oxide semiconductor between the first electrode and the electromotive force layer.

Abstract: This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.

Abstract: A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.

Abstract: There is provided an electrode structure for preventing cracks occurring in a metal electrode due to heating in a manufacturing process in the case of stacking an insulating resin and the metal electrode which are different in thermal expansion coefficient. An electrode for a semiconductor circuit, stacked on a substrate made of an insulating resin, has an electrode structure composed of a main electrode including a slit formed by cutting out a part thereof to prevent occurrence of a crack in a manufacturing process caused by a difference in thermal expansion coefficient from the substrate, and an auxiliary electrode that covers the slit in the main electrode. No slit is provided but a bridge is formed at a portion where the slit in the main electrode and the slit in the auxiliary electrode overlap with each other, thereby eliminating a gap portion where the electrode does not exist.

Abstract: The purpose of this invention is to provide a repeatedly chargeable and dischargeable quantum battery that is available for a long period of time without an aging change. The quantum battery is charged by causing an n-type metal oxide semiconductor to have a photo-exited structural change, thereby the electrode of quantum battery is prevented from being oxide and a price reduction and stable operation are possible. The repeatedly usable quantum battery is constituted by laminating; a first metal electrode having an oxidation preventing function, charging layer in which an energy level is formed in the band gap by causing an n-type metal oxide semiconductor covered with an insulating material to have a photo-exited structure change and electrons are trapped at the energy level; p-type metal oxide semiconductor layer; and a second metal electrode having the oxidation preventing function, the electrodes are passive metal layers formed of metals having passive characteristics.

Abstract: This invention provide a testing device and method for a quantum battery by a semiconductor probe, whereby the electrical characteristics of the charging layer can be evaluated during the quantum battery manufacturing process. The testing device equipped with a semiconductor probe constituted by a conductive electrode and a metal oxide semiconductor layer including a metal oxide semiconductor which are laminated on a support, a source voltage for applying voltage across an electrode equipped to the semiconductor probe and a basic electrode laminated on a secondary battery charging layer, and an ammeter for measuring the current flowing between the electrode equipped on the semiconductor probe and the basic electrode of the secondary battery on which charging layer is laminated, and measures the current-voltage characteristics of the charging layer.

Abstract: An electric-field-sensitive element (1) includes: an optical function layer (5) that includes a metal oxide selected from the group consisting of tin dioxide, titanium dioxide and zinc oxide, and an insulating material covering the metal oxide, the optical function layer (5) having a visible light transmittance that changes through application of an electric field; and a first and second electrode layer (7, 9) that sandwich the optical function layer (5) therebetween.

Abstract: A secondary cell is provided that enables cost reduction and stable operation with a simple configuration and greatly exceeds the capacity of a lithium-ion cell. In a secondary cell, a conductive first electrode is formed on a substrate. An n-type metal oxide semiconductor layer, a charging layer for charging energy, a p-type metal oxide semiconductor layer, and a second electrode are laminated. The charging layer is filled with an n-type metal oxide semiconductor of fine particles. By a photoexcited structural change phenomenon caused by ultraviolet irradiation, a new energy level is formed in a band gap of the n-type metal oxide semiconductor. An electron is captured at the newly formed energy level, thereby charging energy. The charging layer is charged by connecting a power source between the first electrode and the second electrode. It is also possible to charge energy by light, using a transparent electrode.

Abstract: An electric-field-sensitive element (1) includes: an optical function layer (5) that includes a metal oxide selected from the group consisting of tin dioxide, titanium dioxide and zinc oxide, and an insulating material covering the metal oxide, the optical function layer (5) having a visible light transmittance that changes through application of an electric field; and a first and second electrode layer (7, 9) that sandwich the optical function layer (5) therebetween.