Abstract: Provided in the present application is a pixel structure. The pixel structure includes a plurality of pixel units. Each of the pixel units includes four sub-pixels, and the four sub-pixels are one first sub-pixel, two second sub-pixels, and one third sub-pixel, respectively. The two second sub-pixels share a common side to form a second sub-pixel unit. The first sub-pixel and the third sub-pixel are disposed at two opposite sides of the second sub-pixel unit, respectively. And each of the pixel units has a shape of a triangle. Also provided in the present application is a display panel.

Abstract: The present disclosure relates to an electron transport material and an application thereof. According to the electron transport material, a structure of a molecular is designed and selected to be constructed by a group having a high carrier mobility, such that the molecule has a higher carrier mobility. In addition, a core group of the molecule is a structure based on mesitylene triazine. The molecular rigidity of the structure is strong, and the intermolecular stacking can be effectively inhibited, such that the material has a lower refractive index, and the surface plasma polariton loss of an organic light-emitting device can be effectively suppressed. The forward light-emitting efficiency of the light-emitting device can be improved by more than 14% by applying the electron transport material to the device.

Abstract: The present disclosure relates to an electroluminescent material ink, comprising a quantum dot material, an organic light emitting material, and an organic solvent. The organic solvent includes a first solvent shown in general formula (I): wherein R0 is CmH2m+1; R1, R2, R3, and R4 are each independently CnH2n+1, 0?m?8 and 0<n?8, or 0<m?8 and 0?n?8. The electroluminescent material ink has good physical parameters and can effectively prevent nozzle blockage.

Abstract: An electroluminescent device and a light-emitting layer and an application thereof. The light-emitting layer comprises at least one nano-crystalline semiconductor material and at least one exciplex; an emission spectrum of the exciplex is at least partially overlapped with an excitation spectrum of the nano-crystalline semiconductor material; and the attenuation life of an excited state of the exciplex is longer than the attenuation life of an excited state of the nano-crystalline semiconductor material.