Abstract: A Metal Oxide Thin Film Transistor (MOTFT) and a preparation method thereof are provided. The preparation method includes the following steps in turn: Step a: a metal conductive layer is prepared and patterned as a gate on a substrate; Step b: a first insulating thin film is deposited as a gate insulating layer on the metal conductive layer; Step c: a metal oxide thin film is deposited and patterned as an active layer on the gate insulating layer; Step d: an organic conductive thin film is deposited as a back channel etch protective layer on the active layer; Step e: a metal layer is deposited on the back channel etch protective layer and then patterned as pattern of a source electrode and a drain electrode; Step f: a second insulating thin film is deposited as a passivation layer on the source electrode and the drain electrode.
Type:
Grant
Filed:
August 7, 2013
Date of Patent:
May 1, 2018
Assignee:
Guang Zhou New Vision Opto-Electronic Technology Co., Ltd.
Inventors:
Miao Xu, Dongxiang Luo, Hongmeng Li, Jiawei Pang, Ying Guo, Lang Wang