Abstract: A power-on reset circuit according to an embodiment of the present invention includes an input control unit configured to generate a default input signal in response to a power-on reset signal and a clock, a counting unit configured to perform a counting operation in response to the default input signal to generate a count offset signal, and a power-on reset unit configured to perform a counting operation in response to the count offset signal to generate the power-on reset signal.

Abstract: Provided are a three-dimensional image measuring method and apparatus for an LCD color filter automatic grinder. It is possible to measure a three-dimensional image of an LCD color filter, even though textures for recovering the three-dimensional image are insufficient, by irradiating illumination passed through a patterned filter to the LCD color filter. In addition, it is possible to measure a three-dimensional image of an LCD color filter by obtaining a plurality of image sequences along an optical axis of a camera composed of CCD or CIS. Illumination is irradiated to an LCD color filter to be measured through a patterned filter.

Abstract: The present invention relates to recombinant acetylcholine receptor polypeptides recognized by CD4 T cells of a myasthenia gravis patient and compositions for the treatment of myasthenia gravis containing the same as an effective ingredient, more precisely, recombinant acetylcholine receptor polypeptides deficient in B cell epitope, recombinant acetylcholine polypeptides in which two or more T cell epitopes are fused, a composition for the treatment of myasthenia gravis containing the above recombinant polypeptides as an effective ingredient and a treatment method for myasthenia gravis using the composition. The composition containing one or more recombinant polypeptides above can be effectively used as a myasthenia gravis specific therapeutic agent or immunomodulator without side effects.

Abstract: Provided are an organic-inorganic hybrid junction device in which organic and inorganic materials are connected by junction, and a depletion layer is formed at a junction interface, and an organic photovoltaic cell using the same. A basic metal oxide solution is applied to a top surface of a P-doped organic layer. The basic metal oxide solution has N-type characteristics. An oxidation-reduction reaction occurs in response to the application of the basic metal oxide solution at a junction interface of the organic layer, and the metal oxide layer is simultaneously gelated. A free charge is removed from a surface region of the P-doped organic layer by the oxidation-reduction reaction at the interface, which is converted into a depletion region. According to the introduction of the depletion region, P-N junction occurs, and thus the device has a diode characteristic in an electrical aspect. Also, an organic photovoltaic cell including the organic layer, the depletion layer and the metal oxide layer is fabricated.

Abstract: Disclosed are an optical image modulator, an optical apparatus including the same, and methods of manufacturing and operating the optical image modulator. The optical image modulator includes a light amount increasing unit increasing the amount of forward light emission of an electric-optical unit. The light amount increasing unit includes a first reflector reflecting light, which travels from the inside of the electric-optical unit toward the optical-electric unit, to the electric-optical unit. The light amount increasing unit may further include a second light reflector reflecting light, which passes through the optical-electric unit without optical-electric conversion, to the optical-electric unit.

Abstract: Provided is a zinc oxide light emitting diode having improved optical characteristics. The zinc oxide light emitting diode includes an n-type semiconductor layer, a zinc oxide active layer formed on the n-type semiconductor layer, a p-type semiconductor layer formed on the active layer, an anode in electrical contact with the p-type semiconductor layer, a cathode in electrical contact with the n-type semiconductor layer, and a surface plasmon layer disposed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer. Since the surface plasmon layer is formed between the n-type semiconductor layer and the active layer or between the active layer and the p-type semiconductor layer, the light emitting diode is not affected by an increase in resistance due to reduction of the thickness of the p-type semiconductor layer, and has improved optical characteristics due to a resonance phenomenon between the surface plasmon layer and the active layer.

Abstract: A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

Abstract: Disclosed is a low bend loss optical fiber including: a core; an inner layer disposed at outside of the core, which has a refractive index lower than a refractive index of the core, the refractive index of the inner layer gradually decreasing as it becomes farther from the core; and a trench layer disposed at outside of the inner layer, which has a lowest refractive index.

Abstract: The present invention relates to terphenyl dihydroxy monomers containing fluorine and fluorinated poly(arylene ether sulfide)s prepared by using the monomers, more particularly, terphenyl dihydroxy monomers containing both two hydroxy functional groups and fluorine and fluorinated poly(arylene ether sulfide)s prepared by an aromatic nucleophilic substitution polymerization (SNAr) using the monomers, which are thus useful as optical materials in the field of information telecommunications.

Abstract: Disclosed are a monomer of iridium complex having a fluoro group as a functional group, a monomer of carbazole derivative having a hydroxy group as the functional group, and a copolymer containing the monomers in its main chain. The iridium complex used as a phosphorescent material and the carbazole derivative having an excellent hole transporting capability are synthesized as the monomer to form the copolymer. The content of iridium complex is easily controlled, and the carbazole derivative and iridium complex are contained in the main chain during the copolymer formation, thereby capable of manufacturing a light emitting device with higher heat resistance and chemical stability.

Abstract: Disclosed herein are a perfluoroalkyleneoxy group-substituted phenylethylsilane compound and a polymer thereof. The perfluoroalkyleneoxy group-substituted phenylethylsilane compound represented by Formula 1 has excellent thermal and chemical stability to be solution-processed in a monomer state, and the polymer prepared by thermally crosslinking the compound has a high resistance to organic solvents. Moreover, since an insulating layer prepared by applying the same shows improved thermal and physical properties, it is possible to manufacture organic thin-film transistors having a high on/off ratio in a simple process such as a photolithography for a large-size substrate: wherein R1, R2, R3, Z1, Z2, Z3, and n are the same as defined in the detailed description of the invention.

Abstract: Apparatus for stabilizing carrier-envelope phase (CEP) of laser pulse generated by mode locked pulsed laser based on direct locking method includes laser oscillator, interferometer, detector and double feedback circuit. The laser oscillator includes the mode locked pulsed laser generating the laser pulse. The interferometer generates laser pulses having first and second frequency components from the laser pulse generated by the mode locked pulsed laser to generate first and second interference signals that substantially correspond to each other in time domain and space domain. The detector receives the first and second interference signals to output third and fourth interference signals by inverting phase of the second interference signal. The double feedback circuit controls the laser oscillator so that the CEP of the laser pulse generated by the mode locked pulsed laser has substantially constant value with respect to time using CEP signal obtained from the third and fourth interference signals.

Abstract: A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

Abstract: An optical phase microscope using rotating-¼ wavelength plate with pinhole in the center position and Fourier transformed lens is provided. The optical phase microscope comprises an optical image generator that acquires images for a specimen to be observed, an object plane onto which light beams of the images acquired from the optical image generator are projected, a first transform lens that performs primary Fourier transformation on the light beams passing through the object plane, a ¼ wavelength plate with pinhole at the center position that is positioned to be spaced by a focal distance of the first transform lens from the first transform lens, a secondary transform lens that performs secondary Fourier transformation on the light beams passing through the ¼ wavelength plate, and a phase image generator including a photo detector on which the images of the light beams subjected to the secondary Fourier transformation is focused.

Abstract: The present invention relates to a method for estimating a distance between nodes by using a round trip time (RTT) of a packet based on a CSMA/CA protocol in wireless sensor networks and a system thereof. The present invention provides a method for estimating a distance between nodes in wireless sensor networks that includes (a) measuring a transmission time of a transmission signal transmitted to the other node and a reception time of a reception signal received from the other node in response the transmission signal, and receiving a reception time of the transmission signal through the reception signal from the other node and a transmission time of the reception signal through a signal received after the reception signal from the other node; and (b) estimating a distance to the other node by using the transmission/reception time of all signals acquired in step (a).

Abstract: Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

Abstract: A method of recognizing a tag in an RFID reader includes: obtaining a predetermined frame size in the case where throughput obtained by reflecting a slot length based on the remaining number of tags except for recognized tags within a frame progressing current tag recognition that substantially has a maximum value; and when the current frame size is different from the predetermined frame size, stopping the current progress of frame and changing the current frame size into the expected frame size. The method of recognizing a tag may further include when the current frame size is equal to the expected frame size, changing the current frame size into the frame size that does not cause a throughput inversion phenomenon for the remaining number of tags to be recognized within the frame progressing the current tag recognition. By the throughput inversion phenomenon, the occurrence of throughput loss can be prevented and the tag recognition time is reduced to recognize the tags at high speed.

Abstract: A method of fabricating a micro-vertical structure is provided. The method includes bonding a second crystalline silicon (Si) substrate onto a first crystalline Si substrate by interposing an insulating layer pattern and a cavity, etching the second crystalline Si substrate using a deep reactive ion etch (DRIE) process along a [111] crystal plane vertical to the second crystalline Si substrate, and etching an etched vertical surface of the second crystalline Si substrate using a crystalline wet etching process to improve the surface roughness and flatness of the etched vertical surface. As a result, no morphological defects occur on the etched vertical surface. Also, footings do not occur at an etch end-point due to the insulating layer pattern. In addition, the micro-vertical structure does not float in the air but is fixed to the first crystalline Si substrate, thereby facilitating subsequent processes.

Abstract: The present invention relates to a method and system for determining a position using a one-way ranging technique. The present invention provides a method for determining a position of a target node in a wireless network, including a basic node, a first fixed node, a reference node, a target node, including: (a) calculating a time needed to directly transmit an RF signal originated from the reference node to the basic node and a time needed to arrive at the basic node via the first fixed node; (b) calculating a time needed to directly transmit the RF signal originated from the target node to the basic node and a time needed to arrive at the basic node via the first fixed node; and (c) determining the position of the target node based on the time calculated from steps (a) and (b).

Abstract: Provided are a method and apparatus for manufacturing fiber gratings capable of removing or reducing birefringence and polarization-dependence caused by fiber gratings, and an optical fiber having the fiber gratings formed thereby. The method includes: selectively exposing an optical fiber to a light source, and generating first fiber gratings on the optical fiber; and selectively exposing the optical fiber to a light source on a region spaced apart from the first fiber gratings in a longitudinal direction at a different angle from the first fiber gratings about an axis of the optical fiber, and generating second fiber gratings that are the same as the first fiber gratings. Use of the method and apparatus for manufacturing fiber gratings may effectively remove or reduce birefringence or polarization effects.