Abstract: The present invention is directed to bearings produced from a silicon nitride material. The silicon nitride material consists of a sintering aid selected from the group consisting of Al2O3 and Y2O3, silicon dioxide, and optionally, up to 10 mole %, based on the amount of silicon nitride, of an additive that reacts with silicon nitride, said additive selected from the group consisting of TiO2, WO3, MoO3 and mixtures thereof.

Abstract: The invention relates to a silicone nitride based substrate for semi-conductor components, said substrate containing silicon nitride (Si3N4), silicon carbide (SIC) and silicon oxynitride(Si2N2O) as crystalline phases. The silicon phase content is less or equal to 5%, the shrinkage during production is less than 5% and the open porosity of the substrate is less than 15% vol. %. The invention also relates to a method for the production and use of said substrate as an element of semi-conductor components, particularly thin film solar cells, and semi-conductor components which contain said substrate.